Amplification of a Raman Scattering Signal by Carbon Nanotubes
- Autores: Eletskii A.V.1, Sarychev A.K.2, Boginskaya I.A.2, Bocharov G.S.1, Gaiduchenko I.A.3,4, Egin M.S.1, Ivanov A.V.2, Kurochkin I.N.5, Ryzhikov I.A.2, Fedorov G.E.6,7
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Afiliações:
- National Research University Moscow Power Engineering Institute
- Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
- National Research Center Kurchatov Institute
- Moscow State Pedagogical University
- Emanuel Institute of Biochemical Physics, Russian Academy of Sciences
- National Research University of Electronic Technology
- Moscow Institute of Physics and Technology (State University)
- Edição: Volume 63, Nº 12 (2018)
- Páginas: 496-498
- Seção: Physics
- URL: https://journals.rcsi.science/1028-3358/article/view/193036
- DOI: https://doi.org/10.1134/S1028335818120066
- ID: 193036
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Resumo
The effect of Raman scattering (RLS) signal amplification by carbon nanotubes (CNTs) was studied. Single-layered nanotubes were synthesized by the chemical vapor deposition (CVD) method using methane as a carbon-containing gas. The object of study used was water, the Raman spectrum of which is rather well known. Amplification of the Raman scattering signal by several hundred percent was attained in our work. The maximum amplification of a Raman scattering signal was shown to be achieved at an optimal density of nanotubes on a substrate. This effect was due to the scattering and screening of plasmons excited in CNTs by neighboring nanotubes. The amplification mechanism and the possibilities of optimization for this effect were discussed on the basis of the theory of plasmon resonance in carbon nanotubes.
Sobre autores
A. Eletskii
National Research University Moscow Power Engineering Institute
Autor responsável pela correspondência
Email: Eletskii@mail.ru
Rússia, Moscow, 111250
A. Sarychev
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
Email: BocharovGS@mail.ru
Rússia, Moscow, 125412
I. Boginskaya
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
Email: BocharovGS@mail.ru
Rússia, Moscow, 125412
G. Bocharov
National Research University Moscow Power Engineering Institute
Autor responsável pela correspondência
Email: BocharovGS@mail.ru
Rússia, Moscow, 111250
I. Gaiduchenko
National Research Center Kurchatov Institute; Moscow State Pedagogical University
Email: BocharovGS@mail.ru
Rússia, Moscow, 123182; Moscow, 119991
M. Egin
National Research University Moscow Power Engineering Institute
Email: BocharovGS@mail.ru
Rússia, Moscow, 111250
A. Ivanov
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
Email: BocharovGS@mail.ru
Rússia, Moscow, 125412
I. Kurochkin
Emanuel Institute of Biochemical Physics, Russian Academy of Sciences
Email: BocharovGS@mail.ru
Rússia, Moscow, 119991
I. Ryzhikov
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
Email: BocharovGS@mail.ru
Rússia, Moscow, 125412
G. Fedorov
National Research University of Electronic Technology; Moscow Institute of Physics and Technology (State University)
Email: BocharovGS@mail.ru
Rússia, Moscow; Dolgoprudnyi, Moscow oblast, 141700
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