On the growth of InGaN nanowires by molecular-beam epitaxy: influence of the III/V flux ratio on the structural and optical properties

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Abstract

In this work, we studied the influence of the III/V flux ratio on the structural and optical properties of InGaN nanowires grown by plasma-assisted molecular beam epitaxy. It was found that the formation of InGaN nanowires with a core–shell structure occurs if the III/V flux ratio is about 0.9–1.2 taking into account the In incorporation coefficient. At the same time, an increase in the III/V flux ratio from the intermediate growth regime to metal-rich one leads to a decrease in the In content in nanowires from ~45% to ~35%. This nanowires exhibit photoluminescence at room temperature with a maximum in the range of 600–650 nm. A further increase in the III/V flux ratio to ~1.3, or its decrease to ~0.4 leads to the formation of coalesced nanocolumnar layers with a low In content. The results obtained may be of interest for studying the growth processes of InGaN nanowires and creating RGB light-emitting devices on them.

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About the authors

V. O. Gridchin

Saint-Petersburg State University; Alferov University; IAI RAS; Ioffe Institute

Author for correspondence.
Email: gridchinvo@gmail.com
Russian Federation, 199034, Saint-Petersburg; 194021, Saint-Petersburg; 190103, Saint-Petersburg; 194021, Saint-Petersburg

S. D. Komarov

HSE University

Email: gridchinvo@gmail.com
Russian Federation, 190008, Saint-Petersburg

I. P. Soshnikov

Saint-Petersburg State University; IAI RAS; Ioffe Institute

Email: gridchinvo@gmail.com
Russian Federation, 199034, Saint-Petersburg; 190103, Saint-Petersburg; 194021, Saint-Petersburg

I. V. Shtrom

Saint-Petersburg State University; Alferov University; IAI RAS

Email: gridchinvo@gmail.com
Russian Federation, 199034, Saint-Petersburg; 194021, Saint-Petersburg; 190103, Saint-Petersburg

R. R. Reznik

Saint-Petersburg State University

Email: gridchinvo@gmail.com
Russian Federation, 199034, Saint-Petersburg

N. V. Kryzhanovskaya

HSE University

Email: gridchinvo@gmail.com
Russian Federation, 190008, Saint-Petersburg

G. E. Cirlin

Saint-Petersburg State University; Alferov University; IAI RAS; Ioffe Institute

Email: gridchinvo@gmail.com
Russian Federation, 199034, Saint-Petersburg; 194021, Saint-Petersburg; 190103, Saint-Petersburg; 194021, Saint-Petersburg

References

  1. Morkoç H. // Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth. John Wiley & Sons, 2009. P. 1331.
  2. Karpov S.Y. // MRS Internet J. Nitride Semiconductor Res. 1998. V. 3. № 1. P. 1. https://www.doi.org/10.1557/S1092578300000880
  3. Ho I., Stringfellow G. // Appl. Phys. Lett. 1996. V. 69. № 18. P. 2701. https://www.doi.org/10.1063/1.117683
  4. Grandjean N. Are III-nitride semiconductors also suitable for red emission? // Proc. SPIE OPTO. 2023, San Francisco, California, United States. https://www.doi.org/10.1117/12.2661687
  5. Usman M., Munsif M., Mushtaq U., Anwar A.-R., Muhammad N. // Critical Rev. Solid State Mater. Sci. 2021. V. 46. № 5. P. 450. https://www.doi.org/10.1080/10408436.2020.1819199
  6. Morassi M., Largeau L., Oehler F., Song H.-G., Travers L., Julien F.H., Harmand J.Ch., Cho Y.-H., Glas F., Tchernycheva M., Gogneau N. // Crystal Growth Design. 2018. V. 18. № 4. P. 2545. https://www.doi.org/10.1021/acs.cgd.8b00150
  7. Pan X., Song J., Hong H., Luo M., Nötzel R. // Opt. Exp. 2023. V. 31. № 10. P. 15772. https://www.doi.org/10.1364/OE.486519
  8. Liu X., Sun Yi., Malhotra Y., Pandey A., Wang P., Wu Yu., Sun K., Mi Z. // Photonics Res. 2022. V. 10. № 2. P. 587. https://www.doi.org/10.1364/PRJ.443165
  9. Dubrovskii V.G., Cirlin G.E., Ustinov V.M. // Semiconductors. 2009. V. 43. № 12. P. 1539. https://www.doi.org/10.1134/S106378260912001X
  10. Roche E., André Y., Avit G., Bougerol C., Castelluci D., Réveret F., Gil E., Médard F., Leymarie J., Jean T., Dubrovskii V.G., Trassoudaine A. // Nanotechnology. 2018. V. 29. № 46. P. 465602. https://www.doi.org/10.1088/1361-6528/aaddc1
  11. Kuykendall T., Ulrich P., Yang P. // Nature Materials. 2007. V. 6. № 12. P. 951. https://www.doi.org/10.1038/nmat2037
  12. Gridchin V.O., Kotlyar K.P., Reznik R.R., Dragunova A.S., Kryzhanovskaya N.V., Lendyashova V.V., Kirilenko D.A., Shevchuk D.S., Cirlin G.E. // Nanotechnology. 2021. V. 32. № 33. P. 335604. https://www.doi.org/10.1088/1361-6528/ac0027
  13. Kukushkin S.A., Osipov A.V. // Inorg. Mater. 2021. V. 57. №. 13. P. 1319. https://www.doi.org/10.1134/S0020168521130021
  14. Ivanov S.V., Jmerik V.N., Shubina T.V., Listoshin S.B., Mizerov A.M., Sitnikova A.A., Kim M.-H., Koike M., Kim B.-J., Kop’ev P.S. // J. Crystal Growth. 2007. V. 301. P. 465. https://www.doi.org/10.1016/j.jcrysgro.2006.09.008
  15. Adelmann C., Langer R., Feuillet G., Daudin A. // Appl. Phys. Lett. 1999. V. 75. № 22. P. 3518. https://www.doi.org/10.1063/1.125374
  16. Shugabaev T., Gridchin V.O., Komarov S.D., Kirilen- ko D.A., Kryzhanovskaya N.V., Kotlyar K.P., Reznik R.R., Girshova Y.I., Nikolaev V.V., Kaliteevski M.A., Cir- lin G.E. // Nanomaterials. 2023. V. 13. № 6. P. 1069. https://www.doi.org/10.3390/nano13061069
  17. Gridchin V.O., Reznik R.R., Koltyar K.P., Draguno- va A.S., Kryzhanovskaya N.V., Serov A. Yu., Kukush-kin S.A., Cirlin G.E. // Tech. Phys. Lett. 2021. V. 47. № 21. P. 32. https://www.doi.org/10.21883/TPL.2022.14.52105.18894
  18. oshnikov I.P., Koltyar K.P., Reznik R.R., Gridchin V.O., Lendyashova V.V., Vershinin A.V., Lysak V.V., Kirilen- ko D.A., Bert N.A., Cirlin G.E. // Semiconductors. 2021. V. 55. № 10. P. 795. https://www.doi.org/10.1134/S1063782621090207
  19. Orsal G., Gmili E.L., Fressengeas N., Streque J., Djerboub R., Moudakir T., Sundaram S., Ougazzaden A., Salvestrini J.P. // Opt. Mater. Exp. 2014. Vol. 4. № 5. P. 1030. https://www.doi.org/10.1364/OME.4.001030
  20. Tourbot G., Bougerol C., Grenier A., Den Hertog M., Sam-Giao D., Cooper D., Gilet P., Gayral B., Daudin B. // Nanotechnology. 2011. V. 22. № 7. P. 075601. https://www.doi.org/10.1088/0957-4484/22/7/075601

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2. Fig. 1. Typical SEM images of samples grown at total incident FIII fluxes corresponding to 1.5 (a); 2.0 (b); 5.0 × 10–7 Torr (c) and the obtained RHEED patterns after completion of growth.

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3. Fig. 2. Normalized PL spectra measured at room temperature from samples grown at a flux of FIII = 5.0 (1); 4.0 (2); 3.0 (3); 2.5 (4); 2.0 (5) and 1.5 × 10–7 Torr (6).

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4. Fig. 3. Dependence of radiation energy on the In content in InGaN (a) and dependence of the In content in InGaN on the FIII*/FN flux ratio (b).

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