Effect of Electron Irradiation on the Parameters of Gallium Nitride in a Wide Temperature Range

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Abstract

When irradiating MOVPE n-GaN with electrons with an energy of 0.9 MeV, the values of the carrier removal rate, ƞe for room temperature were established for the first time within the framework of the Van der Pauw method. At the initial (before irradiation) electron concentration of 1.87 × 1017 cm–3, the values of ƞe were 0.023 cm–1 and 0.054 cm–1 at room temperature (293 K) for doses Фn = 1.7 × 1017 cm–2 and Фn = 3.7 × 1017 cm–2, respectively. With temperature decrease, the ƞe value increases: at T = –55°C, the ƞ–1e values are 0.064 cm and 0.086 cm–1 for doses of 1.7 × 1017 cm–2 and 3.7 × 1017 cm–2 respectively. The maximum mobility value in non-irradiated samples is 650 cm2/Vs. After irradiation with a dose of Фn = 3.7 × 1017 cm–2, the maximum mobility value decreases to 530 cm2/Vs. The change in mobility under the influence of irradiation is reliably traced at temperatures of T ≤ 260 K (1000/T ≈ 3.85).

About the authors

A. A. Lebedev

Ioffe Institute

Email: Shura.Lebe@mail.ioffe.ru
St. Petersburg, Russia

A. V. Sakharov

Ioffe Institute

St. Petersburg, Russia

G. A. Oganesyan

Ioffe Institute

St. Petersburg, Russia

V. V. Kozlovski

Department of Experimental Physics Peter the Great St. Petersburg Polytechnic University

St. Petersburg, Russia

D. A. Malevsky

Ioffe Institute

St. Petersburg, Russia

M. E. Levinshtein

Ioffe Institute

Email: Melev@nimis.ioffe.ru
St. Petersburg, Russia

A. E. Nikolaev

Ioffe Institute

St. Petersburg, Russia

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