Study of SiO2 Films Obtained by PECVD and Doped with Zn

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Abstract

The results of studying silicon oxide films obtained by plasma enhanced chemical vapor deposition on Si substrates are presented. They were implanted with 64Zn+ ions with an energy of 50 keV (dose 7 × 1016 cm-2) and then annealed in oxygen atmosphere at elevated temperatures. It has been found that after implantation, zinc is distributed in the SiO2 film according to the normal law with a maximum of about 40 nm. After implantation, zinc is in the silicon oxide film both in the metallic phase (closer to the film surface) and in the oxidized state (in the film depth). After annealing up to 800°C, the zinc profile shifts into the film depth; in this case, the zinc is in the film only in the oxidized state. At high temperatures (over 800°C), the zinc profile shifts toward the film surface.

About the authors

V. V. Privezentsev

National Research Centre "Kurchatov Institute" - Scientific Research Institute for System Analysis

Email: v.privezentsev@mail.ru
Moscow, 117218 Russia

A. A. Firsov

National Research Centre "Kurchatov Institute" - Scientific Research Institute for System Analysis

Email: v.privezentsev@mail.ru
Moscow, 117218 Russia

V. S. Kulikauskas

Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics

Email: v.privezentsev@mail.ru
Moscow, 119991 Russia

V. V. Zatekin

Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics

Email: v.privezentsev@mail.ru
Moscow, 119991 Russia

E. P. Kirilenko

Institute of Nanotechnology of Microelectronics RAS

Email: v.privezentsev@mail.ru
Moscow, 119991 Russia

A. V. Goryachev

Institute of Nanotechnology of Microelectronics RAS

Email: v.privezentsev@mail.ru
Moscow, 119991 Russia

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