Manganite Heterostructures: SrIrO3/La0.7Sr0.3MnO3 and Pt/La0.7Sr0.3MnO3 for Generation and Registration of Spin Current
- Authors: Ovsyannikov G.A.1, Constantinian K.I.1, Ulev G.D.1,2, Shadrin A.V.1,3, Lega P.V.1,4, Orlov A.P.1
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Affiliations:
- Kotelnikov Institute of Radio Engineering and Electronics of the RAS
- National Research University “High School of Economy”, The Faculty of Physics
- Moscow Institute of Physics and Technology (National Research University)
- Рeoples' Friendship University of Russia (RUDN University)
- Issue: No 2 (2024)
- Pages: 81-88
- Section: Articles
- URL: https://journals.rcsi.science/1028-0960/article/view/257514
- DOI: https://doi.org/10.31857/S1028096024020127
- EDN: https://elibrary.ru/AWWJRK
- ID: 257514
Cite item
Abstract
This paper presents the results of experimental studies of the cross section of the boundaries of the SrIrO3/La0.7Sr0.3MnO3 и Pt/La0.7Sr0.3MnO3, heterostructures, in which, upon excitation of ferromagnetic resonance in a La0.7Sr0.3MnO3 film, a spin current arises that flows through the boundary in structure. Epitaxial growth of thin films of strontium iridate SrIrO3 and manganite La0.7Sr0.3MnO3 on a (110) NdGaO3 single-crystal substrate was carried out using magnetron sputtering at high temperature in a mixture of argon and oxygen gases. The spin mixing conductance, which determines the amplitude of the spin current and generally has real Re g↑↓ and imaginary Im g↑↓ parts, was determined from the frequency dependence of the FMR spectrum of the LSMO film and heterostructures. It is shown that the Im g↑↓ quantity, can play an important role in determining the spin Hall angle (θSH) from the angular dependence of the spin magnetoresistance. For the SrIrO3/La0.7Sr0.3MnO3 heterostructures, θSH turned out to be significantly higher (almost an order of magnitude) than for the Pt/La0.7Sr0.3MnO3 heterostructure.
About the authors
G. A. Ovsyannikov
Kotelnikov Institute of Radio Engineering and Electronics of the RAS
Author for correspondence.
Email: gena@hitech.cplire.ru
Russian Federation, Moscow
K. I. Constantinian
Kotelnikov Institute of Radio Engineering and Electronics of the RAS
Email: karen@hitech.cplire.ru
Russian Federation, Moscow
G. D. Ulev
Kotelnikov Institute of Radio Engineering and Electronics of the RAS; National Research University “High School of Economy”, The Faculty of Physics
Email: gena@hitech.cplire.ru
Russian Federation, Moscow; Moscow
A. V. Shadrin
Kotelnikov Institute of Radio Engineering and Electronics of the RAS; Moscow Institute of Physics and Technology (National Research University)
Email: gena@hitech.cplire.ru
Russian Federation, Moscow; Dolgoprudny
P. V. Lega
Kotelnikov Institute of Radio Engineering and Electronics of the RAS; Рeoples' Friendship University of Russia (RUDN University)
Email: gena@hitech.cplire.ru
Russian Federation, Moscow; Moscow
A. P. Orlov
Kotelnikov Institute of Radio Engineering and Electronics of the RAS
Email: gena@hitech.cplire.ru
Russian Federation, Moscow
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