Effects of Resonant Scattering of Channeling Particles with the Generation of Electron and Phonon Excitations

The effects of resonant scattering of fast relativistic leptons directed at small angles relative to a selected crystallographic plane are considered. Simultaneously, the processes of radiation and generation of excitations in crystals by a collimated beam of channeled leptons entering a single crystal at small angles (both greater and less than the Lindhard angle \({{\theta }_{{\text{L}}}}\)) are considered from a unified point of view. The processes of Raman scattering of a monochromatic electromagnetic wave by channeled relativistic leptons (electrons, positrons), which experience the effect of resonant scattering at a small angle of entry relative to a selected crystallographic plane are theoretically studied, as well as the processes of Raman scattering by a relaxing deeply nonequilibrium electron-phonon system of the semiconductor, excited by a relativistic beam of charged leptons of subnanosecond duration directed at a small angle \(\left( {\theta < {{\theta }_{{\text{L}}}}} \right)\) to the crystallographic plane.