Effect of Electron Fluence on the Concentration of Color Centers in Aluminum Oxide Hollow Particles
- Авторлар: Iurina V.1,2, Dudin A.1, Neshimenko V.1,2, Mikhailov M.2
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Мекемелер:
- Аmur State University
- Tomsk State University of Control Systems and Radioelectronics
- Шығарылым: № 2 (2023)
- Беттер: 33-39
- Бөлім: Articles
- URL: https://journals.rcsi.science/1028-0960/article/view/137706
- DOI: https://doi.org/10.31857/S1028096023020152
- EDN: https://elibrary.ru/DTOEQW
- ID: 137706
Дәйексөз келтіру
Аннотация
The effect of fluence (1–7) × 1016 cm–2 electrons with an energy of 30 keV on the concentration of color centers in aluminum oxide hollow particles micron-sized in comparison with bulk Al2O3 microparticles was studied. The analysis was carried out using diffuse reflectance spectra in the range from 250 to 2500 nm in situ. The radiation resistance of the microspheres under study was evaluated relative to micropowders from the difference diffuse reflectance spectra obtained by subtracting the spectra after irradiation from the spectra of non-irradiated samples. Changes in the difference diffuse reflection spectra of aluminum oxide microparticles and microspheres obtained with different electron fluences showed that with an increase in the induced electron fluence, absorption increases throughout the spectrum. It was found that the radiation resistance of aluminum oxide microspheres to the effects of electrons with an energy of 30 keV a fluence (1–7) × 1016 cm–2 greater than the radiation resistance of Al2O3 microparticles. The increase in the radiation resistance of aluminum oxide hollow microparticles compared to the radiation resistance of aluminum oxide bulk microparticles is due to the low concentration of induced defects of the anionic sublattice.
Негізгі сөздер
Авторлар туралы
V. Iurina
Аmur State University; Tomsk State University of Control Systems and Radioelectronics
Хат алмасуға жауапты Автор.
Email: viktoriay-09@mail.ru
Russia, 675027, Blagoveshchensk; Russia, 634050, Tomsk
A. Dudin
Аmur State University
Email: v1ta1y@mail.ru
Russia, 675027, Blagoveshchensk
V. Neshimenko
Аmur State University; Tomsk State University of Control Systems and Radioelectronics
Хат алмасуға жауапты Автор.
Email: v1ta1y@mail.ru
Russia, 675027, Blagoveshchensk; Russia, 634050, Tomsk
M. Mikhailov
Tomsk State University of Control Systems and Radioelectronics
Email: v1ta1y@mail.ru
Russia, 634050, Tomsk
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