Binary and Pseudobinary Invar Materials based on Intermediate Valence Compounds


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A new type of binary and pseudobinary invar materials based on intermediate valence samarium compounds Sm0.8B6, Sm1 – xLaxB6 (x = 0, 0.1, 0.22, and 0.5), Sm0.67Y0.33S, Sm0.55Y0.45S, and Sm2.75C60 are developed. The Weiss two-level invar model is used to describe the anomalous contribution to the coefficient of thermal expansion (CTE) for Sm0.8B6 and Sm1 – xLaxB6 (x = 0, 0.1, 0.22, and 0.5). The minimum position of the CTE of samarium hexaboride as a function of the degree of lanthanum doping is determined. The obtained dependence allows one to predict the CTE minimum position for Sm1 – xLaxB6 compounds in the temperature range from 40 to 180 K and to optimize the developed composite invar materials, where the positive CTE of the functional material is compensated by the negative CTE of the valence-unstable system.

作者简介

D. Serebrennikov

Research and Education Center “Functional Nanomaterials”, Immanuel Kant Baltic Federal University

编辑信件的主要联系方式.
Email: dserebrennikov@innopark.kantiana.ru
俄罗斯联邦, Kaliningrad, 236016

E. Clementyev

Research and Education Center “Functional Nanomaterials”, Immanuel Kant Baltic Federal University; Institute for Nuclear Research, Russian Academy of Sciences

Email: dserebrennikov@innopark.kantiana.ru
俄罗斯联邦, Kaliningrad, 236016; Moscow, 117312

P. Alekseev

National Research Center “Kurchatov Institute”; National Research Nuclear University “MEPhI”

Email: dserebrennikov@innopark.kantiana.ru
俄罗斯联邦, Moscow, 123182; Moscow, 115409

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