Stand for Studying the Effect of Proton Irradiation on Integrated Circuits: Estimation of Particle Fluxes, Activation, and Dose Rate


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

A stand for the irradiation of electronic integrated circuits is developed at the proton beam of the linear accelerator of the Institute for Nuclear Research, Russian Academy of Sciences. Estimation of secondary neutron fluxes in the experimental hall and in the surrounding medium outside the external shielding of the accelerator is performed. The issue of the impact of albedo protons and neutrons from the beam trap on the irradiated object is considered. The activation and cooling of the stand elements and the irradiated object as well as the dose rate are calculated. The data obtained allow safe operating conditions of the stand and optimal modes of irradiation to be selected. The calculations were carried out by the Monte Carlo method using the SHIELD hadron transport code for proton-beam parameters which are maximal at this time: energy of 209 MeV, current of 1 μA.

作者简介

S. Gavrilov

Institute for Nuclear Research

Email: lebedev@inr.ru
俄罗斯联邦, Moscow, 117312

L. Latysheva

Institute for Nuclear Research

Email: lebedev@inr.ru
俄罗斯联邦, Moscow, 117312

S. Lebedev

Institute for Nuclear Research

编辑信件的主要联系方式.
Email: lebedev@inr.ru
俄罗斯联邦, Moscow, 117312

N. Sobolevsky

Institute for Nuclear Research

Email: lebedev@inr.ru
俄罗斯联邦, Moscow, 117312

A. Feschenko

Institute for Nuclear Research

Email: lebedev@inr.ru
俄罗斯联邦, Moscow, 117312

补充文件

附件文件
动作
1. JATS XML

版权所有 © Pleiades Publishing, Ltd., 2018