Influence of the magnetization-distribution nonuniformity on the sensitivity of anisotropic magnetoresistive sensors


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The specific features of numerical calculation of the magnetization-reversal process in thin-film components with large linear dimensions and a complex topology in relation to magnetoresistive transducers (sensors) are considered. The calculated value of the sensor sensitivity obtained within the framework of a uniform and micromagnetic magnetization-reversal model is compared with experimental data. Calculations of the magnetization-reversal process within the framework of the micromagnetic model show the positive effect of edge magnetization pinning which is manifested in the mutual compensation of current and magnetization- distribution nonuniformities; it can be used to enhance the sensitivity of anisotropic magnetoresistive (AMR) sensors.

作者简介

A. Yurov

National Research University of Electronic Technology (MIET), Nanotechnology Center

Email: cogtepsum@gmail.com
俄罗斯联邦, Moscow, Zelenograd, 124498

R. Preobrazhensky

National Research University of Electronic Technology (MIET), Nanotechnology Center

编辑信件的主要联系方式.
Email: cogtepsum@gmail.com
俄罗斯联邦, Moscow, Zelenograd, 124498

N. Mazurkin

National Research University of Electronic Technology (MIET), Nanotechnology Center

Email: cogtepsum@gmail.com
俄罗斯联邦, Moscow, Zelenograd, 124498

M. Chinenkov

National Research University of Electronic Technology (MIET), Nanotechnology Center; OOO “SPINTEK,”

Email: cogtepsum@gmail.com
俄罗斯联邦, Moscow, Zelenograd, 124498; Moscow, Zelenograd, 124498

N. Djuzhev

National Research University of Electronic Technology (MIET), Nanotechnology Center

Email: cogtepsum@gmail.com
俄罗斯联邦, Moscow, Zelenograd, 124498

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