Electron Radiation during Planar Channeling in Crystals with the CsCl Structure
- Авторы: Maksyuta N.V.1, Vysotskii V.I.1, Efimenko S.V.1, Slinchenko Y.A.1
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Учреждения:
- Shevchenko Kyiv National University
- Выпуск: Том 13, № 6 (2019)
- Страницы: 1296-1301
- Раздел: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/196592
- DOI: https://doi.org/10.1134/S1027451019060417
- ID: 196592
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Аннотация
The interaction potentials between electrons and the principal charged (111) and (100) planes in CsCl-type crystals are calculated using the Molière, Firsov, Barrett, and Doyle—Turner approximations for single-particle ion potentials. The features of the structures of these interaction potentials are studied without considering the influence of the temperature factor and with its inclusion. For relativistic electrons with Lorentz factors of γ = 25, 50, 75 channeled in these planes, the transverse energy levels and the wave functions corresponding to them are numerically found for all crystals with CsCl-type structures. Based on these data, the spectra of channeling radiation are calculated under the condition that electron beams (with an angular dispersion θ0 equal to zero and to ≈0.3 mrad) are incident at zero angles with respect to the crystallographic (111) and (100) planes. It is shown that the generated radiation is most intense in the (100) planes of the CsCl-type crystals.
Об авторах
N. Maksyuta
Shevchenko Kyiv National University
Email: vivysotskii@gmail.com
Украина, Kyiv, 01601
V. Vysotskii
Shevchenko Kyiv National University
Автор, ответственный за переписку.
Email: vivysotskii@gmail.com
Украина, Kyiv, 01601
S. Efimenko
Shevchenko Kyiv National University
Email: vivysotskii@gmail.com
Украина, Kyiv, 01601
Y. Slinchenko
Shevchenko Kyiv National University
Email: vivysotskii@gmail.com
Украина, Kyiv, 01601
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