Influence of a Carbon-Modified Surface on the Field-Emission Properties of Silicon Crystals

Аннотация

Multi-point cathode matrices, the surface density of which is 10⁷–10⁹ cm^–2 and the maximum field-emission current density is 1.5–2 orders of magnitude higher than that obtained on silicon crystals with the help of traditional microelectronic technologies, are fabricated using the self-organization phenomenon during the microwave plasma deposition of submonolayer carbon mask films onto silicon (100) crystals with a natural oxide coating and highly anisotropic plasma-chemical etching. The mechanism whereby mask carbon coatings are formed is discussed, and the optimal duration of the formation processes is determined. The interdependence between the surface morphology and field-emission properties is described in the scope of the Fowler‒Nordheim theory taking into account microstructural changes in the surface phases of silicon asperities.