Influence of the Crystallographic Orientation of a Substrate on the Nucleation, Shape, and Evolution of Silicon Pores during its Electrochemical Etching in Hydrofluoric-Acid Solutions

E. N. Abramova; Yu. V. Syrov; A. M. Khort; A. G. Yakovenko; D. I. Prokhorov

doi:10.1134/S1027451018020027

Influence of the Crystallographic Orientation of a Substrate on the Nucleation, Shape, and Evolution of Silicon Pores during its Electrochemical Etching in Hydrofluoric-Acid Solutions

Авторы: Abramova E.N.¹, Syrov Y.V.¹, Khort A.M.¹, Yakovenko A.G.¹, Prokhorov D.I.¹
Учреждения:
1. Lomonosov Moscow State University of Fine Chemical Technologies
Выпуск: Том 12, № 2 (2018)
Страницы: 217-221
Раздел: Article
URL: https://journals.rcsi.science/1027-4510/article/view/195061
DOI: https://doi.org/10.1134/S1027451018020027
ID: 195061

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Аннотация

It is established that the crystallographic orientation of a single-crystal silicon substrate affects the nucleation, shape, and evolution of silicon pores during its electrochemical etching. The shape, spatial orientation, and initiation of silicon pores is demonstrated to depend on both the etchant-solution properties caused by an etching-ion structure and the Si lattice symmetry.