Investigation of X-ray diffraction limitations upon the analysis of tellurium-atom injection into GaAs epitaxial layers


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Аннотация

GaAs lattice “superdilation” caused by an introduced tellurium impurity, which is well known in publications, is experimentally studied. This phenomenon consists in the fact that the GaAs-lattice dilation can be more than 10 times greater than expansion that would appear upon the replacement of arsenic atoms with tellurium atoms if calculations are performed using the current-carrier concentration and Vegard’s law. The given phenomenon has already been observed at nTe > 3 × 1018 cm–3. A series of GaAs epitaxial layers heavily doped with tellurium and grown via metal-organic chemical vapor deposition are investigated using high-resolution X-ray diffractometry (HRXRD), secondary-ion mass spectrometry (SIMS), and the Hall effect. It is demonstrated that, despite a high Te concentration (1020‒1021 cm–3) in the layer and variations in the growth conditions, the concentration estimates based on HRXRD data depend linearly on the results of elemental analysis performed by means of SIMS. The GaAs lattice expands even somewhat slighter as compared to the case where arsenic atoms are replaced with all Te atoms injected into the layer. At the same time, the Hall carrier concentration decreases sharply beginning at 2 × 1020 cm–3. In accordance with the obtained results, the examined phenomenon can be interpreted as the strong compensation of donor and acceptor carriers rather than as superdilation.

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Авторлар туралы

Yu. Drozdov

Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod

Хат алмасуға жауапты Автор.
Email: drozdyu@ipmras.ru
Ресей, Afonino, Nizhny Novgorod oblast, 603087; Nizhny Novgorod, 603950

V. Danil’tsev

Institute for Physics of Microstructures

Email: drozdyu@ipmras.ru
Ресей, Afonino, Nizhny Novgorod oblast, 603087

M. Drozdov

Institute for Physics of Microstructures

Email: drozdyu@ipmras.ru
Ресей, Afonino, Nizhny Novgorod oblast, 603087

P. Yunin

Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod

Email: drozdyu@ipmras.ru
Ресей, Afonino, Nizhny Novgorod oblast, 603087; Nizhny Novgorod, 603950

E. Demidov

Institute for Physics of Microstructures

Email: drozdyu@ipmras.ru
Ресей, Afonino, Nizhny Novgorod oblast, 603087

P. Folomin

National University of Science and Technology MISiS

Email: drozdyu@ipmras.ru
Ресей, Moscow, 119991

A. Gritsenko

National University of Science and Technology MISiS

Email: drozdyu@ipmras.ru
Ресей, Moscow, 119991

S. Korolev

Institute for Physics of Microstructures

Email: drozdyu@ipmras.ru
Ресей, Afonino, Nizhny Novgorod oblast, 603087

E. Surovegina

Institute for Physics of Microstructures

Email: drozdyu@ipmras.ru
Ресей, Afonino, Nizhny Novgorod oblast, 603087

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