Pulsed magnetron sputtering and ion-induced annealing of carbon films

Аннотация

Thin carbon films are deposited on a silicon substrate at room temperatures via the biased pulsed magnetron sputtering of graphite in the physical (Ar, Kr, Xe) and reactive (Ar: CH4) modes at a different sputtering power density varying from 40 to 550 W/cm². To ensure ion-assistance, negative bias of the substrate is set during film deposition by means of both DC and pulsed power sources. Some deposition parameters lead to a high hardness of the films (12.5 GPa), optical transparency, a surface resistance of RS > 10⁹ Ω/h, and developed nanomorphology of the sample surface which bears visible inclusions with a lateral size of 35 nm. Some of the films are annealed after deposition with a C⁺-ion beam with an energy of 20 keV. A correlation between the parameters of magnetron deposition and ion-beam modification and the examined characteristics of the films is found. Different R_S values in a wide range can be achieved by means of simple adjustment of the parameters and modes during magnetron sputtering and ion-beam modification.