Investigation of the technological features of anisotropic chemical etching upon the production of sensors of physical quantities

Аннотация

The procedures for forming elements of sensors of physical quantities by anisotropic etching are examined. How etching conditions influence the roughness of silicon wafers is investigated and ways to decrease the roughness are determined. It is shown that, to etch silicon wafers, the liquid etching procedure is predominantly used. The morphology and roughness of silicon-wafer surfaces are investigated with the help of scanning electron microscopy and atomic-force microscopy.