Thermodynamic Analysis of Interface-Interaction Processes in a Silicon/Silicon Carbide Structure during Electron-Beam Treatment
- Авторлар: Gusev E.Y.1, Avdeev S.P.1, Ageev O.A.1
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Мекемелер:
- Research and Education Center “Nanotechnology”, Southern Federal University
- Шығарылым: Том 13, № 2 (2019)
- Беттер: 256-260
- Бөлім: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/196264
- DOI: https://doi.org/10.1134/S1027451019020095
- ID: 196264
Дәйексөз келтіру
Аннотация
Thermodynamic calculations of the temperature dependences of the Gibbs energy of the interface interaction of a Si melt with the surface of a SiC substrate during electron-beam treatment are conducted. The temperature regimes of phase formation are determined. According to thermodynamic analysis, a number of possible transformations of higher and lower stoichiometry carbides in SiC are proposed. The most probable reactions of SiC synthesis and dissolution in silicon are determined; it is found that the range of soluble concentrations of the substrate material is 263 ppm at T = 1685 K to 990 ppm at T = 1873 K.
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Авторлар туралы
E. Gusev
Research and Education Center “Nanotechnology”, Southern Federal University
Хат алмасуға жауапты Автор.
Email: eyugusev@sfedu.ru
Ресей, Taganrog, 347928
S. Avdeev
Research and Education Center “Nanotechnology”, Southern Federal University
Email: eyugusev@sfedu.ru
Ресей, Taganrog, 347928
O. Ageev
Research and Education Center “Nanotechnology”, Southern Federal University
Email: eyugusev@sfedu.ru
Ресей, Taganrog, 347928
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