Thermodynamic Analysis of Interface-Interaction Processes in a Silicon/Silicon Carbide Structure during Electron-Beam Treatment


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Аннотация

Thermodynamic calculations of the temperature dependences of the Gibbs energy of the interface interaction of a Si melt with the surface of a SiC substrate during electron-beam treatment are conducted. The temperature regimes of phase formation are determined. According to thermodynamic analysis, a number of possible transformations of higher and lower stoichiometry carbides in SiC are proposed. The most probable reactions of SiC synthesis and dissolution in silicon are determined; it is found that the range of soluble concentrations of the substrate material is 263 ppm at T = 1685 K to 990 ppm at T = 1873 K.

Авторлар туралы

E. Gusev

Research and Education Center “Nanotechnology”, Southern Federal University

Хат алмасуға жауапты Автор.
Email: eyugusev@sfedu.ru
Ресей, Taganrog, 347928

S. Avdeev

Research and Education Center “Nanotechnology”, Southern Federal University

Email: eyugusev@sfedu.ru
Ресей, Taganrog, 347928

O. Ageev

Research and Education Center “Nanotechnology”, Southern Federal University

Email: eyugusev@sfedu.ru
Ресей, Taganrog, 347928

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