Synthesis of Rhenium-Silicide Microcrystals in a Tin Melt


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The present work is aimed at discussing the possibility in principle of obtaining rhenium-silicide microcrystals in tin melt at temperatures of 200–250 K below those used in the synthesis of pure components. The formation of rhenium silicides is confirmed by X-ray diffraction and scanning electron microscopy data. According to phase diagrams, neither rhenium nor silicon is soluble in tin, which does not allow the process to be described in the context of classical solution-melt crystallization theory. In this case, Sn is assumed to be a catalyst in the high-temperature chemical reaction between rhenium and silicon, favoring a decrease in the silicide-formation temperature and opens up the possibility of producing polycrystalline layers of these materials with a temperature gradient.

作者简介

F. Solomkin

Ioffe Physical–Technical Institute, Russian Academy of Sciences

编辑信件的主要联系方式.
Email: f.solomkin@mail.ioffe.ru
俄罗斯联邦, Saint-Petersburg, 194021

A. Orekhov

Institute of Crystallography, Federal Research Center “Crystallography and Photonics,” Russian Academy of Sciences; National Research Center “Kurchatov Institute”

Email: f.solomkin@mail.ioffe.ru
俄罗斯联邦, Moscow, 119333; Moscow, 123182

N. Sharenkova

Ioffe Physical–Technical Institute, Russian Academy of Sciences

Email: f.solomkin@mail.ioffe.ru
俄罗斯联邦, Saint-Petersburg, 194021

G. Khavrov

Ioffe Physical–Technical Institute, Russian Academy of Sciences

Email: f.solomkin@mail.ioffe.ru
俄罗斯联邦, Saint-Petersburg, 194021

G. Isachenko

Ioffe Physical–Technical Institute, Russian Academy of Sciences

Email: f.solomkin@mail.ioffe.ru
俄罗斯联邦, Saint-Petersburg, 194021

N. Zaitseva

Ioffe Physical–Technical Institute, Russian Academy of Sciences

Email: f.solomkin@mail.ioffe.ru
俄罗斯联邦, Saint-Petersburg, 194021

V. Klechkovskaya

Institute of Crystallography, Federal Research Center “Crystallography and Photonics,” Russian Academy of Sciences

Email: f.solomkin@mail.ioffe.ru
俄罗斯联邦, Moscow, 119333

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