HPHT single crystal diamond type IIB growth sector influence on the secondary electron emission phenomenon


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Secondary electron emission (SEE) coefficient correlation with (100) synthetic HPHT-grown single crystal diamonds type IIa and type IIb growth sectors was investigated. SEE coefficient quantitative measurements were carried out for various growth sectors: the highest magnitudes were revealed for (100), (311) and {110} growth sectors, but {111} growth sectors have SEE coefficient 4‒6 times lower in comparison with mentioned above for both investigated crystal types. The SEE coefficient dependence of primary beam energy is non-standard for all growth sectors: SEE coefficient goes up with primary beam energy increasing. These results are very important for diamond microelectronics as various growth sectors utilization considerably changes output characteristics.

作者简介

V. Sadovoy

Technological Institute for Superhard and Novel Carbon Materials (TISNCM)

编辑信件的主要联系方式.
Email: sadovoy.vladimir@gmail.com
俄罗斯联邦, Troitsk, Moscow, 142190

V. Blank

Technological Institute for Superhard and Novel Carbon Materials (TISNCM); Moscow Institute of Physics and Technology; National University of Science and Technology MISiS

Email: sadovoy.vladimir@gmail.com
俄罗斯联邦, Troitsk, Moscow, 142190; Dolgoprudny, Moscow oblast, 141700; Moscow, 119049

D. Teteruk

Technological Institute for Superhard and Novel Carbon Materials (TISNCM)

Email: sadovoy.vladimir@gmail.com
俄罗斯联邦, Troitsk, Moscow, 142190

S. Terentiev

Technological Institute for Superhard and Novel Carbon Materials (TISNCM)

Email: sadovoy.vladimir@gmail.com
俄罗斯联邦, Troitsk, Moscow, 142190

N. Kornilov

Technological Institute for Superhard and Novel Carbon Materials (TISNCM)

Email: sadovoy.vladimir@gmail.com
俄罗斯联邦, Troitsk, Moscow, 142190

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