On the annealing of radiation-induced point defects in tungsten
- Autores: Ryabtsev S.A.1, Gasparyan Y.M.1, Zibrov M.S.1, Pisarev A.A.1
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Afiliações:
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
- Edição: Volume 10, Nº 3 (2016)
- Páginas: 658-662
- Seção: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/189136
- DOI: https://doi.org/10.1134/S1027451016030332
- ID: 189136
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Resumo
The interaction between deuterium and radiation-induced point defects in tungsten and the stages of their transformation and annealing are investigated by means of thermal-desorption spectroscopy. Primary defects, mainly vacancies, are created using 10-keV D+ ions at room temperature. In investigating the evolution of radiation-induced defects, irradiated samples are annealed at temperatures of 550–1400 K and the subsequent filling of defects is carried out by deuterium after sample irradiation with D3+ ions with an energy of 0.67 keV/deuteron at room temperature. The characteristic positions of thermal desorption peaks, as well as the temperatures of vacancy clusterization and annealing of defects, are determined.
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Sobre autores
S. Ryabtsev
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Autor responsável pela correspondência
Email: ryabtsev91@mail.ru
Rússia, Moscow, 115409
Yu. Gasparyan
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Email: ryabtsev91@mail.ru
Rússia, Moscow, 115409
M. Zibrov
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Email: ryabtsev91@mail.ru
Rússia, Moscow, 115409
A. Pisarev
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Email: ryabtsev91@mail.ru
Rússia, Moscow, 115409
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