Investigation of stacking faults introduced into 4H-SiC crystals by indentation

Аннотация

Stacking faults introduced into 4H-SiC crystals by indentation at 600°C are studied by the cathodoluminescence and electron-beam-induced-current (EBIC) methods. The type of stacking faults is determined using the cathodoluminescence spectra. Double stacking faults are shown to expand even under very low mechanical stresses, while the expansion of single stacking faults requires a higher stress. Such behavior is explained by different stacking-fault energies and electronic components of the effective driving force induced by electron capture into quantum wells associated with stacking faults.