Room Temperature Spin Accumulation Effect in Boron Doped Si Created by Epitaxial Fe3Si/p-Si Schottky Contact


Cite item

Full Text

Open Access Open Access
Restricted Access Access granted
Restricted Access Subscription Access

Abstract

To study spin-dependent transport phenomena in Fe3Si/p-Si structures we fabricated 3-terminal planar microdevices and metal/semiconductor diode using conventional photolithography and wet chemical etching. I‒V curve of prepared diode demonstrates rectifying behavior, which indicates the presence of Schottky barrier in Fe3Si/p-Si interface. Calculated Schottky barrier height is 0.57 eV, which can provide necessary conditions for spin accumulation in p-Si. Indeed, in 3-terminal planar device with Fe3Si/p-Si Schottky contact Hanle effect was observed. By the analysis of Hanle curves spin lifetime spin diffusion length in p-Si were calculated, which are 145 ps and 405 nm, respectively (at T = 300 K). Spin lifetime strongly depends on temperature which can be related to the fact that spin-dependent transport in our device is realized via the surface states. This gives a perspective of creation of spintronic devices based on metal/semiconductor structure without need for forming tunnel or Schottky tunnel contact.

About the authors

A. S. Tarasov

Kirensky Institute of Physics; Institute of Engineering Physics and Radio Electronics

Email: fbi1993@mail.ru
Russian Federation, Krasnoyarsk, 660036; Krasnoyarsk, 660041

I. A. Bondarev

Kirensky Institute of Physics; Institute of Engineering Physics and Radio Electronics

Author for correspondence.
Email: fbi1993@mail.ru
Russian Federation, Krasnoyarsk, 660036; Krasnoyarsk, 660041

M. V. Rautskii

Kirensky Institute of Physics

Email: fbi1993@mail.ru
Russian Federation, Krasnoyarsk, 660036

A. V. Lukyanenko

Kirensky Institute of Physics; Institute of Engineering Physics and Radio Electronics

Email: fbi1993@mail.ru
Russian Federation, Krasnoyarsk, 660036; Krasnoyarsk, 660041

I. A. Tarasov

Kirensky Institute of Physics; Siberian State Aerospace University

Email: fbi1993@mail.ru
Russian Federation, Krasnoyarsk, 660036; Krasnoyarsk, 660014

S. N. Varnakov

Kirensky Institute of Physics; Siberian State Aerospace University

Email: fbi1993@mail.ru
Russian Federation, Krasnoyarsk, 660036; Krasnoyarsk, 660014

S. G. Ovchinnikov

Kirensky Institute of Physics; Institute of Engineering Physics and Radio Electronics

Email: fbi1993@mail.ru
Russian Federation, Krasnoyarsk, 660036; Krasnoyarsk, 660041

N. V. Volkov

Kirensky Institute of Physics

Email: fbi1993@mail.ru
Russian Federation, Krasnoyarsk, 660036

Supplementary files

Supplementary Files
Action
1. JATS XML

Copyright (c) 2018 Pleiades Publishing, Ltd.