Room Temperature Spin Accumulation Effect in Boron Doped Si Created by Epitaxial Fe3Si/p-Si Schottky Contact
- Authors: Tarasov A.S.1,2, Bondarev I.A.1,2, Rautskii M.V.1, Lukyanenko A.V.1,2, Tarasov I.A.1,3, Varnakov S.N.1,3, Ovchinnikov S.G.1,2, Volkov N.V.1
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Affiliations:
- Kirensky Institute of Physics
- Institute of Engineering Physics and Radio Electronics
- Siberian State Aerospace University
- Issue: Vol 12, No 4 (2018)
- Pages: 633-637
- Section: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/195698
- DOI: https://doi.org/10.1134/S1027451018040171
- ID: 195698
Cite item
Abstract
To study spin-dependent transport phenomena in Fe3Si/p-Si structures we fabricated 3-terminal planar microdevices and metal/semiconductor diode using conventional photolithography and wet chemical etching. I‒V curve of prepared diode demonstrates rectifying behavior, which indicates the presence of Schottky barrier in Fe3Si/p-Si interface. Calculated Schottky barrier height is 0.57 eV, which can provide necessary conditions for spin accumulation in p-Si. Indeed, in 3-terminal planar device with Fe3Si/p-Si Schottky contact Hanle effect was observed. By the analysis of Hanle curves spin lifetime spin diffusion length in p-Si were calculated, which are 145 ps and 405 nm, respectively (at T = 300 K). Spin lifetime strongly depends on temperature which can be related to the fact that spin-dependent transport in our device is realized via the surface states. This gives a perspective of creation of spintronic devices based on metal/semiconductor structure without need for forming tunnel or Schottky tunnel contact.
About the authors
A. S. Tarasov
Kirensky Institute of Physics; Institute of Engineering Physics and Radio Electronics
Email: fbi1993@mail.ru
Russian Federation, Krasnoyarsk, 660036; Krasnoyarsk, 660041
I. A. Bondarev
Kirensky Institute of Physics; Institute of Engineering Physics and Radio Electronics
Author for correspondence.
Email: fbi1993@mail.ru
Russian Federation, Krasnoyarsk, 660036; Krasnoyarsk, 660041
M. V. Rautskii
Kirensky Institute of Physics
Email: fbi1993@mail.ru
Russian Federation, Krasnoyarsk, 660036
A. V. Lukyanenko
Kirensky Institute of Physics; Institute of Engineering Physics and Radio Electronics
Email: fbi1993@mail.ru
Russian Federation, Krasnoyarsk, 660036; Krasnoyarsk, 660041
I. A. Tarasov
Kirensky Institute of Physics; Siberian State Aerospace University
Email: fbi1993@mail.ru
Russian Federation, Krasnoyarsk, 660036; Krasnoyarsk, 660014
S. N. Varnakov
Kirensky Institute of Physics; Siberian State Aerospace University
Email: fbi1993@mail.ru
Russian Federation, Krasnoyarsk, 660036; Krasnoyarsk, 660014
S. G. Ovchinnikov
Kirensky Institute of Physics; Institute of Engineering Physics and Radio Electronics
Email: fbi1993@mail.ru
Russian Federation, Krasnoyarsk, 660036; Krasnoyarsk, 660041
N. V. Volkov
Kirensky Institute of Physics
Email: fbi1993@mail.ru
Russian Federation, Krasnoyarsk, 660036
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