Broadband Spontaneous and Stimulated Luminescence of Heavily Doped AlxGa1 – xN Structures


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Resumo

The spectral characteristics of spontaneous and stimulated luminescence of heavily silicon-doped AlxGa1 – xN structures with the concentration nSi > 1020 cm–3 are studied with pulsed optical pumping at λ = 266 nm. The resulting dominant broadband radiation with a full width at half maximum of ~150 nm covers the whole visible spectral region. The radiation spectrum from the end of the structure is split into narrow components determined by the mode structure of the planar waveguide formed. The results indicate the stimulated character of the radiation. The optical gain for different structures fall in the range 20–70 cm–1.

Sobre autores

P. Bokhan

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Autor responsável pela correspondência
Email: bokhan@isp.nsc.ru
Rússia, Novosibirsk, 630090

K. Zhuravlev

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: bokhan@isp.nsc.ru
Rússia, Novosibirsk, 630090

D. Zakrevsky

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State Technical University

Email: bokhan@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630073

T. Malin

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: bokhan@isp.nsc.ru
Rússia, Novosibirsk, 630090

I. Osinnykh

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: bokhan@isp.nsc.ru
Rússia, Novosibirsk, 630090

N. Fateev

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: bokhan@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090

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