About anomalous g factor value of Mn-related defects in GaAs:Mn
- Autores: Yakubenya S.1, Shtel’makh K.2,3
-
Afiliações:
- NRC “Kurchatov Institute”
- St. Petersburg State Polytechnic University
- Ioffe Institute
- Edição: Volume 47, Nº 7 (2016)
- Páginas: 671-684
- Seção: Article
- URL: https://journals.rcsi.science/0937-9347/article/view/247440
- DOI: https://doi.org/10.1007/s00723-015-0746-4
- ID: 247440
Citar
Resumo
The results of experimental investigations of electron spin resonance (ESR) spectra of manganese impurity ions in a GaAs:Mn system are presented. The studies are done for various a Fermi level position relative to valence band edge in the system. Characteristic defects for the system that give rise to lines with g factors of 5.62 and 2.81 in the ESR spectra are studied in some detail. The experimental results are discussed in the framework of a previously developed model with a double defect involving the impurity ion. The “3d5 + hole” model is a special case of the double defect model in this system. An analytical expression for the covalent renormalization of the g factor of an ESR line in this system is obtained.
Sobre autores
S. Yakubenya
NRC “Kurchatov Institute”
Autor responsável pela correspondência
Email: seryak56@mail.ru
Rússia, Moscow
K. Shtel’makh
St. Petersburg State Polytechnic University; Ioffe Institute
Email: seryak56@mail.ru
Rússia, St. Petersburg; St. Petersburg