About anomalous g factor value of Mn-related defects in GaAs:Mn


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Abstract

The results of experimental investigations of electron spin resonance (ESR) spectra of manganese impurity ions in a GaAs:Mn system are presented. The studies are done for various a Fermi level position relative to valence band edge in the system. Characteristic defects for the system that give rise to lines with g factors of 5.62 and 2.81 in the ESR spectra are studied in some detail. The experimental results are discussed in the framework of a previously developed model with a double defect involving the impurity ion. The “3d5 + hole” model is a special case of the double defect model in this system. An analytical expression for the covalent renormalization of the g factor of an ESR line in this system is obtained.

About the authors

S. M. Yakubenya

NRC “Kurchatov Institute”

Author for correspondence.
Email: seryak56@mail.ru
Russian Federation, Moscow

K. F. Shtel’makh

St. Petersburg State Polytechnic University; Ioffe Institute

Email: seryak56@mail.ru
Russian Federation, St. Petersburg; St. Petersburg

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