Spin-Dependent Phenomena in Semiconductors and Semiconductor/Ferromagnetic Heterostructures
- 作者: Kusrayev Y.G.1
-
隶属关系:
- Ioffe Institute
- 期: 卷 47, 编号 7 (2016)
- 页面: 657-669
- 栏目: Article
- URL: https://journals.rcsi.science/0937-9347/article/view/247488
- DOI: https://doi.org/10.1007/s00723-016-0790-8
- ID: 247488
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详细
The present paper considers spin-dependent phenomena in semiconductors and semiconductor/ferromagnet hybrids. The methods of spin generation, spin detection, and spin control are discussed. A close relation of these methods with spin-related phenomena, such as electrical spin injection, spin Hall effect, and tunneling magnetoresistance, is shown. The advantages and disadvantages of spintronic materials (ferromagnetic semiconductors, hybrids semiconductor/ferromagnet, materials with paramagnetic centers, etc.) from the point of view of their utilization in devices are treated.
作者简介
Yu Kusrayev
Ioffe Institute
编辑信件的主要联系方式.
Email: kusrayev@orient.ioffe.ru
俄罗斯联邦, Politehnicheskaja 26, St. Petersburg, 194021
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