Spin-Dependent Phenomena in Semiconductors and Semiconductor/Ferromagnetic Heterostructures
- Authors: Kusrayev Y.G.1
-
Affiliations:
- Ioffe Institute
- Issue: Vol 47, No 7 (2016)
- Pages: 657-669
- Section: Article
- URL: https://journals.rcsi.science/0937-9347/article/view/247488
- DOI: https://doi.org/10.1007/s00723-016-0790-8
- ID: 247488
Cite item
Abstract
The present paper considers spin-dependent phenomena in semiconductors and semiconductor/ferromagnet hybrids. The methods of spin generation, spin detection, and spin control are discussed. A close relation of these methods with spin-related phenomena, such as electrical spin injection, spin Hall effect, and tunneling magnetoresistance, is shown. The advantages and disadvantages of spintronic materials (ferromagnetic semiconductors, hybrids semiconductor/ferromagnet, materials with paramagnetic centers, etc.) from the point of view of their utilization in devices are treated.
About the authors
Yu G. Kusrayev
Ioffe Institute
Author for correspondence.
Email: kusrayev@orient.ioffe.ru
Russian Federation, Politehnicheskaja 26, St. Petersburg, 194021
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