Spin-Dependent Phenomena in Semiconductors and Semiconductor/Ferromagnetic Heterostructures


Cite item

Full Text

Open Access Open Access
Restricted Access Access granted
Restricted Access Subscription Access

Abstract

The present paper considers spin-dependent phenomena in semiconductors and semiconductor/ferromagnet hybrids. The methods of spin generation, spin detection, and spin control are discussed. A close relation of these methods with spin-related phenomena, such as electrical spin injection, spin Hall effect, and tunneling magnetoresistance, is shown. The advantages and disadvantages of spintronic materials (ferromagnetic semiconductors, hybrids semiconductor/ferromagnet, materials with paramagnetic centers, etc.) from the point of view of their utilization in devices are treated.

About the authors

Yu G. Kusrayev

Ioffe Institute

Author for correspondence.
Email: kusrayev@orient.ioffe.ru
Russian Federation, Politehnicheskaja 26, St. Petersburg, 194021

Supplementary files

Supplementary Files
Action
1. JATS XML

Copyright (c) 2016 Springer-Verlag Wien