On mechanism of radiative sensitivity of power diode direct voltage drop


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There are carried out experimental researches of dependence of drop of direct voltage of current-voltage characteristics of the silicone power diode on electrons radiation dose. It is stated that dose increase from 2×1014 to 2×1015 Φe/cm2 results in direct voltage drop on the diode increases monotonically, and the lifetime of the minority charge carriers decreases by a factor of ten. It is shown the dominating role of decrease of minority charge carriers density in the base together with majority charge carries lifetime at forming of current-voltage characteristics of after irradiation by electrons.

作者简介

A. Karimov

Physical-Technical Institute of the Scientific Association “Physics-Sun” of Academy Sciences of Republic of Uzbekistan

Email: info@pleiadesonline.com
乌兹别克斯坦, Tashkent

A. Rakhmatov

“Foton” Joint-stock Company

Email: info@pleiadesonline.com
乌兹别克斯坦, Tashkent

S. Skorniakov

Novosibirsk Plant of Semiconductor Devices

Email: info@pleiadesonline.com
俄罗斯联邦, Novosibirsk

D. Yodgorova

Physical-Technical Institute of the Scientific Association “Physics-Sun” of Academy Sciences of Republic of Uzbekistan

Email: info@pleiadesonline.com
乌兹别克斯坦, Tashkent

A. Karimov

Physical-Technical Institute of the Scientific Association “Physics-Sun” of Academy Sciences of Republic of Uzbekistan

Email: info@pleiadesonline.com
乌兹别克斯坦, Tashkent

Sh. Kuliev

Physical-Technical Institute of the Scientific Association “Physics-Sun” of Academy Sciences of Republic of Uzbekistan

Email: info@pleiadesonline.com
乌兹别克斯坦, Tashkent


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