On mechanism of radiative sensitivity of power diode direct voltage drop

Abstract

There are carried out experimental researches of dependence of drop of direct voltage of current-voltage characteristics of the silicone power diode on electrons radiation dose. It is stated that dose increase from 2×10¹⁴ to 2×10¹⁵ Φ_e/cm² results in direct voltage drop on the diode increases monotonically, and the lifetime of the minority charge carriers decreases by a factor of ten. It is shown the dominating role of decrease of minority charge carriers density in the base together with majority charge carries lifetime at forming of current-voltage characteristics of after irradiation by electrons.