Measurement of the Height of Nanorelief Elements by the Method of Three-Dimensional Reconstruction in a Scanning Electron Microscope


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Comparative measurements of the height of the nanorelief steps of the surface of a silicon wafer by methods of three-dimensional reconstruction using a scanning electron microscope and profilometry were carried out. To realize the method of three-dimensional reconstruction, an islet gold film is formed on the surface of the test sample. The AlphaStep D-600 profiler is calibrated with a KTS-4500 QS step height gauge. The coincidence of the results of measurements with the methods of three-dimensional reconstruction and profilometry is established. The possibilities of reducing the uncertainty of the measurement results by the method of three-dimensional reconstruction were analyzed.

作者简介

S. Darznek

Research Center for the Study of the Properties of Surfaces and Vacuum (NITsPV)

编辑信件的主要联系方式.
Email: fgupnicpv@mail.ru
俄罗斯联邦, Moscow

D. Karabanov

Research Center for the Study of the Properties of Surfaces and Vacuum (NITsPV)

Email: fgupnicpv@mail.ru
俄罗斯联邦, Moscow

A. Kuzin

All-Russia Research Institute of Metrological Service (VNIIMS)

Email: fgupnicpv@mail.ru
俄罗斯联邦, Moscow

V. Mityukhlyaev

Research Center for the Study of the Properties of Surfaces and Vacuum (NITsPV)

Email: fgupnicpv@mail.ru
俄罗斯联邦, Moscow

P. Todua

Research Center for the Study of the Properties of Surfaces and Vacuum (NITsPV); Moscow Institute of Physics and Technology (State University)

Email: fgupnicpv@mail.ru
俄罗斯联邦, Moscow; Dolgoprudny

M. Filippov

Research Center for the Study of the Properties of Surfaces and Vacuum (NITsPV); Moscow Institute of Physics and Technology (State University); Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences (IGIC RAS)

Email: fgupnicpv@mail.ru
俄罗斯联邦, Moscow; Dolgoprudny; Moscow

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