Microelectronic Gas Resistive Sensor Based on Nanocrystalline Tin Dioxide Films with Terbium and Antimony Additives
- Authors: Kalugin S.M.1, Gulyaev A.M.2, Stroganov D.A.1, Sarach O.B.2, Tevyashov A.A.1, Kotov V.A.2
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Affiliations:
- Russian Space Systems
- National Research University – Moscow Power Engineering Institute (MPEI)
- Issue: Vol 61, No 9 (2018)
- Pages: 955-958
- Section: Physicochemical Measurements
- URL: https://journals.rcsi.science/0543-1972/article/view/246611
- DOI: https://doi.org/10.1007/s11018-018-1532-0
- ID: 246611
Cite item
Abstract
The technology of microelectronic resistive gas sensors is considered. Heater and thermistor contacts are formed on an oxidized silicon substrate by sputtering a nichrome film and subsequent photolithography in combination with reactive magnetron sputtering of a nanocrystalline tin dioxide film with terbium and antimony additives. A 1.5 × 1.5 mm sensor requires 90 mW for heating to optimal working temperature of 250–280°C. The sensor has very high sensitivity to alcohols and low sensitivity to benzene and acetone.
About the authors
S. M. Kalugin
Russian Space Systems
Email: guljaev@mpei.ru
Russian Federation, Moscow
A. M. Gulyaev
National Research University – Moscow Power Engineering Institute (MPEI)
Author for correspondence.
Email: guljaev@mpei.ru
Russian Federation, Moscow
D. A. Stroganov
Russian Space Systems
Email: guljaev@mpei.ru
Russian Federation, Moscow
O. B. Sarach
National Research University – Moscow Power Engineering Institute (MPEI)
Email: guljaev@mpei.ru
Russian Federation, Moscow
A. A. Tevyashov
Russian Space Systems
Email: guljaev@mpei.ru
Russian Federation, Moscow
V. A. Kotov
National Research University – Moscow Power Engineering Institute (MPEI)
Email: guljaev@mpei.ru
Russian Federation, Moscow