Microelectronic Gas Resistive Sensor Based on Nanocrystalline Tin Dioxide Films with Terbium and Antimony Additives
- Авторлар: Kalugin S.1, Gulyaev A.2, Stroganov D.1, Sarach O.2, Tevyashov A.1, Kotov V.2
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Мекемелер:
- Russian Space Systems
- National Research University – Moscow Power Engineering Institute (MPEI)
- Шығарылым: Том 61, № 9 (2018)
- Беттер: 955-958
- Бөлім: Physicochemical Measurements
- URL: https://journals.rcsi.science/0543-1972/article/view/246611
- DOI: https://doi.org/10.1007/s11018-018-1532-0
- ID: 246611
Дәйексөз келтіру
Аннотация
The technology of microelectronic resistive gas sensors is considered. Heater and thermistor contacts are formed on an oxidized silicon substrate by sputtering a nichrome film and subsequent photolithography in combination with reactive magnetron sputtering of a nanocrystalline tin dioxide film with terbium and antimony additives. A 1.5 × 1.5 mm sensor requires 90 mW for heating to optimal working temperature of 250–280°C. The sensor has very high sensitivity to alcohols and low sensitivity to benzene and acetone.
Авторлар туралы
S. Kalugin
Russian Space Systems
Email: guljaev@mpei.ru
Ресей, Moscow
A. Gulyaev
National Research University – Moscow Power Engineering Institute (MPEI)
Хат алмасуға жауапты Автор.
Email: guljaev@mpei.ru
Ресей, Moscow
D. Stroganov
Russian Space Systems
Email: guljaev@mpei.ru
Ресей, Moscow
O. Sarach
National Research University – Moscow Power Engineering Institute (MPEI)
Email: guljaev@mpei.ru
Ресей, Moscow
A. Tevyashov
Russian Space Systems
Email: guljaev@mpei.ru
Ресей, Moscow
V. Kotov
National Research University – Moscow Power Engineering Institute (MPEI)
Email: guljaev@mpei.ru
Ресей, Moscow