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Identification of Optically Active Quartet Spin Centers Based on a Si Vacancy in SiC Promising for Quantum Technologies
- Authors: Babunts R.A.1, Uspenskaya Y.A.1, Bundakova A.P.1, Mamin G.V.2, Mokhov E.N.1, Baranov P.G.1
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Affiliations:
- Ioffe Institute
- Kazan Federal University
- Issue: Vol 118, No 9-10 (11) (2023)
- Pages: 639-648
- Section: Articles
- URL: https://journals.rcsi.science/0370-274X/article/view/246969
- DOI: https://doi.org/10.31857/S1234567823210036
- EDN: https://elibrary.ru/PRQECV
- ID: 246969
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Abstract
Optically active (bright) and optically inactive (dark) quartet S = 3/2 spin color centers including a negatively charged Si vacancy have been identified in silicon carbide using high-frequency electron nuclear double resonance on the nuclei of the 13C isotope, enhanced by a tenfold increase in its content. The alignment of populations of spin levels is optically induced in a bright center promising for quantum technologies, whereas the populations of spin levels in a dark center, which is an isolated negatively charged Si vacancy V-Si, correspond to a Boltzmann distribution and do not change under optical excitation.
About the authors
R. A. Babunts
Ioffe Institute
Email: yulia.uspenskaya@mail.ioffe.ru
194021, St. Petersburg, Russia
Yu. A. Uspenskaya
Ioffe Institute
Email: yulia.uspenskaya@mail.ioffe.ru
194021, St. Petersburg, Russia
A. P. Bundakova
Ioffe Institute
Email: yulia.uspenskaya@mail.ioffe.ru
194021, St. Petersburg, Russia
G. V. Mamin
Kazan Federal University
Email: yulia.uspenskaya@mail.ioffe.ru
420008, Kazan, Russia
E. N. Mokhov
Ioffe Institute
Email: yulia.uspenskaya@mail.ioffe.ru
194021, St. Petersburg, Russia
P. G. Baranov
Ioffe Institute
Author for correspondence.
Email: yulia.uspenskaya@mail.ioffe.ru
194021, St. Petersburg, Russia
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