Identifikatsiya opticheski aktivnykh kvartetnykh spinovykh tsentrov na osnove vakansii kremniya v SiC, perspektivnykh dlya kvantovykh tekhnologiy
- Авторлар: Babunts R.1, Uspenskaya Y.1, Bundakova A.1, Mamin G.2, Mokhov E.1, Baranov P.1
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Мекемелер:
- Ioffe Institute
- Kazan Federal University
- Шығарылым: Том 118, № 9-10 (11) (2023)
- Беттер: 639-648
- Бөлім: Articles
- URL: https://journals.rcsi.science/0370-274X/article/view/246969
- DOI: https://doi.org/10.31857/S1234567823210036
- EDN: https://elibrary.ru/PRQECV
- ID: 246969
Дәйексөз келтіру
Аннотация
Optically active (bright) and optically inactive (dark) quartet S = 3/2 spin color centers including a negatively charged Si vacancy have been identified in silicon carbide using high-frequency electron nuclear double resonance on the nuclei of the 13C isotope, enhanced by a tenfold increase in its content. The alignment of populations of spin levels is optically induced in a bright center promising for quantum technologies, whereas the populations of spin levels in a dark center, which is an isolated negatively charged Si vacancy V-Si, correspond to a Boltzmann distribution and do not change under optical excitation.
Авторлар туралы
R. Babunts
Ioffe Institute
Email: yulia.uspenskaya@mail.ioffe.ru
194021, St. Petersburg, Russia
Yu. Uspenskaya
Ioffe Institute
Email: yulia.uspenskaya@mail.ioffe.ru
194021, St. Petersburg, Russia
A. Bundakova
Ioffe Institute
Email: yulia.uspenskaya@mail.ioffe.ru
194021, St. Petersburg, Russia
G. Mamin
Kazan Federal University
Email: yulia.uspenskaya@mail.ioffe.ru
420008, Kazan, Russia
E. Mokhov
Ioffe Institute
Email: yulia.uspenskaya@mail.ioffe.ru
194021, St. Petersburg, Russia
P. Baranov
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: yulia.uspenskaya@mail.ioffe.ru
194021, St. Petersburg, Russia
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