The energy position of size quantization levels in multiple HgCdTe quantum wells

N. N. Mikhailov; Михайлов Н. Н.; V. G. Remesnik; Ремесник В. Г.; V. Ya. Aleshkin; Алешкин В. Я.; S. A. Dvoretsky; Дворецкий С. А.; I. N. Uzhakov; Ужаков И. Н.; V. A. Shvets; Швец В. А.

doi:10.31857/S0367676523701491

The energy position of size quantization levels in multiple HgCdTe quantum wells

Авторлар: Mikhailov N.¹, Remesnik V.¹, Aleshkin V.², Dvoretsky S.¹, Uzhakov I.¹, Shvets V.¹^,3
Мекемелер:
1. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
2. Institute for Physics of Microstructures of the Russian Academy of Sciences
3. Novosibirsk State University
Шығарылым: Том 87, № 6 (2023)
Беттер: 861-866
Бөлім: Articles
URL: https://journals.rcsi.science/0367-6765/article/view/135410
DOI: https://doi.org/10.31857/S0367676523701491
EDN: https://elibrary.ru/VMIDPK
ID: 135410

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Толық мәтін

Ашық рұқсат
Рұқсат жабық

Рұқсат берілді
Рұқсат жабық

Тек жазылушылар үшін

Аннотация
Авторлар туралы
Әдебиет тізімі
Қосымша файлдар
Статистика

Аннотация

The energy position of size quantization levels size levels in the multiple Hg_0.3Cd_0.7Te/HgTe quantum wells grown by molecular beam epitaxy on (013)GaAs substrate has been studied. The experimental and calculated values of the energy position of three size quantization levels are obtained.

Авторлар туралы

N. Mikhailov

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy
of Sciences

Хат алмасуға жауапты Автор.
Email: mikhailov@isp.nsc.ru
Russia, 630090, Novosibirsk

V. Remesnik

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy
of Sciences

Email: mikhailov@isp.nsc.ru
Russia, 630090, Novosibirsk

V. Aleshkin

Institute for Physics of Microstructures of the Russian Academy of Sciences

Email: mikhailov@isp.nsc.ru
Russia, 603950, Nizhny Novgorod

S. Dvoretsky

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy
of Sciences

Email: mikhailov@isp.nsc.ru
Russia, 630090, Novosibirsk

I. Uzhakov

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy
of Sciences

Email: mikhailov@isp.nsc.ru
Russia, 630090, Novosibirsk

V. Shvets

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy
of Sciences; Novosibirsk State University

Email: mikhailov@isp.nsc.ru
Russia, 630090, Novosibirsk; Russia, 630090, Novosibirsk

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