Production and electronic transport in thin films of strontium iridate
- 作者: Moskal I.E.1,2, Petrzhik A.M.1, Kislinskii Y.V.1, Shadrin A.V.1,2, Ovsyannikov G.A.1, Dubitskiy N.V.3
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隶属关系:
- Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences
- Moscow Institute of Physics and Technology (National Research University)
- Russian Technological University – MIREA
- 期: 卷 88, 编号 4 (2024)
- 页面: 673-676
- 栏目: Magnetic Phenomena and Smart Composite Materials
- URL: https://journals.rcsi.science/0367-6765/article/view/271466
- DOI: https://doi.org/10.31857/S0367676524040211
- EDN: https://elibrary.ru/QGROJC
- ID: 271466
如何引用文章
详细
The results of the study of epitaxial thin films of SrIrO3 are presented, data on growth technology, crystal structure and electronic transport are presented. In SrIrO3 films received in a mixture of Ar and O2 gases, the dependence of resistance on temperature has a metallic character. For the films deposited in pure argon, the resistance versus temperature curves shows both a metallic and a dielectric behavior. It depends on the deposition pressure and the deposition temperature. The activation energy was calculated for dielectric samples and compared with the activation energy for Sr2IrO4 films.
作者简介
I. Moskal
Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences; Moscow Institute of Physics and Technology (National Research University)
编辑信件的主要联系方式.
Email: ivan.moscal@yandex.ru
俄罗斯联邦, Moscow, 125009; Dolgoprudny, 141701
A. Petrzhik
Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences
Email: ivan.moscal@yandex.ru
俄罗斯联邦, Moscow, 125009
Yu. Kislinskii
Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences
Email: ivan.moscal@yandex.ru
俄罗斯联邦, Moscow, 125009
A. Shadrin
Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences; Moscow Institute of Physics and Technology (National Research University)
Email: ivan.moscal@yandex.ru
俄罗斯联邦, Moscow, 125009; Dolgoprudny, 141701
G. Ovsyannikov
Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences
Email: ivan.moscal@yandex.ru
俄罗斯联邦, Moscow, 125009
N. Dubitskiy
Russian Technological University – MIREA
Email: ivan.moscal@yandex.ru
俄罗斯联邦, Moscow, 119454
参考
- Petrzhik A.M., Constantinian K.Y., Ovsyannikov G.A. et al. // Phys. Rev. B. 2019. V. 100. Art. No. 024501.
- Petrzhik A.M., Constantinian K.Y., Ovsyannikov G.A. et al. // J. Surf. Invest. X-Ray Synchrotron Neutron Techn. 2020. V. 14. No. 3. P. 547.
- Ovsyannikov G.A., Constantinian K.Y., Shmakov V.A. et al. // Phys. Rev. B. 2023. V. 107. Art. No. 144419.
- Kazunori Nishio, Harold Y. Hwang // APL Materials. 2016. V. 4. Art. No. 036102.
- Gutierrez-Llorente A., Iglesias L., Rodr’iguez-Gonz’alez B., Rivadulla F. // APL Materials. 2018. V. 6. Art. No. 091101.
- Fuentes V., Vasic B., Konstantinovic Z. et al. // J. Magn. Magn. Mater. 2020. V. 501. Art. No. 166419.
- Петржик А.М., Cristiani G., Логвенов Г. и др. // Письма в ЖТФ. 2017. Т. 43. № 12. С. 25; Petrzhik A.M., Cristiani G., Logvenov G. et al. // Tech. Phys. Lett. 2017. V. 43. No. 6. P. 554.
- Biswas A., Jeong Y.H. // Current Appl. Phys. 2017. V. 17. P. 605.
- Кислинский Ю.В., Овсянников Г.А., Петржик А.М. и др. // ФТТ. 2015. Т. 57. № 12. С. 2446; Kislinskii Yu.V., Ovsyannikov G.A., Petrzhik A.M. et al. // Phys. Solid State. 2015. V. 57. No. 12. P. 2519.
- Gao G., Schlottmann P. // Rep. Prog. Phys. 2018. V. 81. Art. No. 042502.
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