Email this article Electron microscopy and electron energy loss spectroscopy of titanium nitride thin films in TiNx/La: HfO2 (Hf0.5Zr0.5O)/TiNx/SiO2
- Authors: Suvorova E.I.1, Uvarov O.V.2, Klimenko A.A.3, Chizh K.V.2,3
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Affiliations:
- Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics” of the Russian Academy of Sciences
- Prokhorov General Physics Institute of Russian Academy of Sciences
- Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences
- Issue: Vol 87, No 10 (2023)
- Pages: 1434-1440
- Section: Articles
- URL: https://journals.rcsi.science/0367-6765/article/view/141839
- DOI: https://doi.org/10.31857/S0367676523702502
- EDN: https://elibrary.ru/DGTUPE
- ID: 141839
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Abstract
The structure and properties of TiNx electrodes obtained by plasma-enhanced atomic layer deposition in the 20 nm TiNx/10 nm La: HfO2(Hf0.5Zr0.5O)/20 nm TiNx/1 μm SiO2 system have been studied by electron microscopy and electron energy loss spectroscopy. It is shown that the electrode material has a TiNxOy composition, the band gap width varies within 1.7–2.5 eV, the resistivity is 208 μOm cm and the value of the temperature coefficient of resistance (20–100°C) is equal to –31.4 ⋅ 10–6 1/K.
About the authors
E. I. Suvorova
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”of the Russian Academy of Sciences
Author for correspondence.
Email: suvorova@crys.ras.ru
Russia, 119333, Moscow
O. V. Uvarov
Prokhorov General Physics Institute of Russian Academy of Sciences
Email: suvorova@crys.ras.ru
Russia, 119991, Moscow
A. A. Klimenko
Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences
Email: suvorova@crys.ras.ru
Russia, 119991, Moscow
K. V. Chizh
Prokhorov General Physics Institute of Russian Academy of Sciences; Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences
Email: suvorova@crys.ras.ru
Russia, 119991, Moscow; Russia, 119991, Moscow
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