GaN/AlGaN resonant Bragg structure
- Авторлар: Ivanov A.1, Chaldyshev V.1, Zavarin E.1, Sakharov A.1, Lundin W.1, Tsatsulnikov A.2
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Мекемелер:
- Ioffe Physical-Technical Institute of the Russian Academy of Sciences
- Submicron Heterostructures for Microelectronics Research & Engineering Center of the Russian Academy of Sciences
- Шығарылым: Том 87, № 6 (2023)
- Беттер: 892-895
- Бөлім: Articles
- URL: https://journals.rcsi.science/0367-6765/article/view/135415
- DOI: https://doi.org/10.31857/S0367676523701545
- EDN: https://elibrary.ru/VNGBLG
- ID: 135415
Дәйексөз келтіру
Аннотация
Reflection spectra from a resonant Bragg structure with 30 GaN/AlGaN quantum wells have been measured at room temperature. Numerical modeling using the method of transfer matrices gave a quantitatively accurate fit of the experimental results. Defined radiative and non-radiative broadening parameters of the exciton in GaN/AlGaN quantum wells.
Авторлар туралы
A. Ivanov
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: chald.gvg@mail.ioffe.ru
Russia, 194021, Saint Petersburg
V. Chaldyshev
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: chald.gvg@mail.ioffe.ru
Russia, 194021, Saint Petersburg
E. Zavarin
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: chald.gvg@mail.ioffe.ru
Russia, 194021, Saint Petersburg
A. Sakharov
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: chald.gvg@mail.ioffe.ru
Russia, 194021, Saint Petersburg
W. Lundin
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: chald.gvg@mail.ioffe.ru
Russia, 194021, Saint Petersburg
A. Tsatsulnikov
Submicron Heterostructures for Microelectronics Research & Engineering Centerof the Russian Academy of Sciences
Email: chald.gvg@mail.ioffe.ru
Russia, 194021, Saint Petersburg
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