电邮这篇文章 Self-sustaining conducting state and bipolar ionizing Gunn domains in pulse avalanche GaAs diodes
- 作者: Rozhkov А.1, Ivanov M.1, Rodin P.1
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隶属关系:
- Ioffe Physical-Technical Institute of the Russian Academy of Sciences
- 期: 卷 87, 编号 6 (2023)
- 页面: 873-878
- 栏目: Articles
- URL: https://journals.rcsi.science/0367-6765/article/view/135412
- DOI: https://doi.org/10.31857/S036767652370151X
- EDN: https://elibrary.ru/VMNICK
- ID: 135412
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详细
Domain instability in nonequilibrium electron-hole plasma leads to the formation of narrow moving regions of the ionizing electric field—collapsing Gunn domains. In pulse power electronics devices based on gallium arsenide, impact ionization in collapsing domains acts as an efficient mechanism for the generation of nonequilibrium carriers at low voltages and weak average electric fields.
作者简介
А. Rozhkov
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: rodin@mail.ioffe.ru
Russia, 194021, St. Petersburg
M. Ivanov
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: rodin@mail.ioffe.ru
Russia, 194021, St. Petersburg
P. Rodin
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
编辑信件的主要联系方式.
Email: rodin@mail.ioffe.ru
Russia, 194021, St. Petersburg
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