A NEW METHOD WITH NON-DESTRUCTIVE DIAGNOSTICS FOR DETERMINING INTERNAL DEFECTS IN SILICON VIDEOCON TARGETS

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Abstract

The necessity of developing new methods for non-destructive testing of silicon targets structure and detection of internal defects in them is substantiated. It is established that a number of internal defects are not identified by the methods used for testing targets (these defects appear only during vidicon operation). For the targets, a study of the substrate structure and the formed topology, as well as the surface of the photosensitive elements, was carried out using X-ray diffractometry and a developed optical microscope with the formation of a diffraction image. Substrate deformation was established, which led to the formation of mechanical stresses with an increase in the concentration of charge carrier generation centers. A significant violation of the (111) orientation in the structure of the Si target substrate was detected. A new result was obtained that explains the formation of white illumination in the recorded images during vidicon testing and two reasons for the formation of an internal defect in the target, which led to its appearance, were established. Uneven impact along the edges of the target when pressing it on the indium ring and uneven application of layers during the manufacture of its structure. A new non-destructive method of testing silicon targets has been developed to detect this internal defect and others during their manufacture before installation in the vidicon. A number of measures have been proposed to eliminate these defects during the implementation of the technological process

About the authors

Vadim Davydov

Peter the Great St. Petersburg Polytechnic University; St. Petersburg State Electrotechnical University “LETI”

Author for correspondence.
Email: davydov_vadim66@mail.ru
ORCID iD: 0000-0001-9530-4805
SPIN-code: 7618-4840
Scopus Author ID: 7201851532
ResearcherId: F-1794-2016

д.ф.-м.н., профессор, ИММиТ

Russian Federation, 195251 Saint Petersburg, Politechnicheskaya Str., 29; 197022 Saint Petersburg, str. Professor Popov, 5

Anastasia Sokolova

JSC Central Research Institute Electron

Email: nansokol@list.ru
Russian Federation, 194223, Saint Petersburg, Torez Avenue, 68 lit. R

Valentina Andreeva

Peter the Great St. Petersburg Polytechnic University

Email: avd2007@bk.ru
Russian Federation, 195251 Saint Petersburg, Politechnicheskaya Str., 29

Sergey Kotov

Peter the Great St. Petersburg Polytechnic University

Email: serkotov51@mail.ru
Russian Federation, 195251 Saint Petersburg, Politechnicheskaya Str., 29

Sergey Ganin

Peter the Great St. Petersburg Polytechnic University

Email: s.v.ganin@gmail.com
Russian Federation, 195251 Saint Petersburg, Politechnicheskaya Str., 29

Artem Kim

Peter the Great St. Petersburg Polytechnic University

Email: artem_7.kim@mail.ru
Russian Federation, 195251 Saint Petersburg, Politechnicheskaya Str., 29

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