Thermodynamic simulation of the CVD process in the system Ni–Si–C–H
- 作者: Shestakov V.1, Kosinova M.1
-
隶属关系:
- Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences
- 期: 卷 69, 编号 1 (2024)
- 页面: 43-48
- 栏目: ФИЗИКО-ХИМИЧЕСКИЙ АНАЛИЗ НЕОРГАНИЧЕСКИХ СИСТЕМ
- URL: https://journals.rcsi.science/0044-457X/article/view/257659
- DOI: https://doi.org/10.31857/S0044457X24010059
- EDN: https://elibrary.ru/ZZSXIQ
- ID: 257659
如何引用文章
详细
Owing to its unique properties, oxygen-free ceramics are promising for use in various branches of technology. The inclusion of metals or their compounds in this ceramic significantly expands the possibilities of its application. Therefore, methods for the synthesis of such composites are being actively developed. One of the ways to obtain such films is the deposition from the gas phase. Thermodynamic modeling allows you to choose the conditions for this process. In this work, thermodynamic modeling of the CVD process in the Ni-Si-C-H system, where nickelocene and silane were precursors, was carried out. The results of the work can be useful for developing methods for obtaining film materials based on SiC and nickel-containing phases.
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作者简介
V. Shestakov
Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: vsh@niic.nsc.ru
俄罗斯联邦, 630090 Novosibirsk
M. Kosinova
Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences
Email: vsh@niic.nsc.ru
俄罗斯联邦, 630090 Novosibirsk
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