Thermodynamic simulation of the CVD process in the system Ni–Si–C–H

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Abstract

Owing to its unique properties, oxygen-free ceramics are promising for use in various branches of technology. The inclusion of metals or their compounds in this ceramic significantly expands the possibilities of its application. Therefore, methods for the synthesis of such composites are being actively developed. One of the ways to obtain such films is the deposition from the gas phase. Thermodynamic modeling allows you to choose the conditions for this process. In this work, thermodynamic modeling of the CVD process in the Ni-Si-C-H system, where nickelocene and silane were precursors, was carried out. The results of the work can be useful for developing methods for obtaining film materials based on SiC and nickel-containing phases.

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About the authors

V. A. Shestakov

Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences

Author for correspondence.
Email: vsh@niic.nsc.ru
Russian Federation, 630090 Novosibirsk

M. L. Kosinova

Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences

Email: vsh@niic.nsc.ru
Russian Federation, 630090 Novosibirsk

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Supplementary files

Supplementary Files
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2. Fig. 1. CVD diagram of the Ni(C5H5)2–9SiH4–nH2 system at P = 0.05 Torr. The dashed line indicates the melting point of NiSi (992С).

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3. Fig. 2. CVD diagram of the Ni(C5H5)2–mSiH4–50H2 system, m = [SiH4]/[Ni(C5H5)2].

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4. Fig. 3. Dependence of the x value, corresponding to the ratio of the sum of moles of SiC and Ni7Si13 to the sum of moles of all phases of the complex, on the parameter m at 700°C.

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