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INTEGRAL RELATIONS METHOD FOR ESTIMATING PLASMA PARAMETERS OF A MICROWAVE RESONATOR DURING THE FORMATION OF A DOPED DELTA-LAYER IN DIAMOND
- Authors: Alekseev N.I1,2, Broiko A.P1, Oreshko I.V1,2
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Affiliations:
- Saint Petersburg State Electrotechnical University "LETI"
- Ioffe Physical-Technical Institute, RAS
- Issue: Vol 99, No 10 (2025)
- Pages: 1528-1539
- Section: PHYSICAL CHEMISTRY OF NANOCLUSTERS, SUPRAMOLECULAR STRUCTURES, AND NANOMATERIALS
- Submitted: 27.01.2026
- Published: 15.10.2025
- URL: https://journals.rcsi.science/0044-4537/article/view/376381
- DOI: https://doi.org/10.7868/S3034553725100106
- ID: 376381
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Abstract
The possibility of combining TM and TE modes in a microwave plasma resonator for the growth of diamond with a doped δ-layer of p-type (boron) and minimal thickness by the CVD method has been considered. A model based on the integral relations method allows estimating the parameters of the resulting plasma ball, as well as the position of the substrate bearing the diamond growth surface relative to the plasma ball, and the dependence of this position on gas pressure—particularly the preference for low-pressure operation (not accounted for in applied plasma packages) for better adherence of the plasma ball to the substrate.
About the authors
N. I Alekseev
Saint Petersburg State Electrotechnical University "LETI"; Ioffe Physical-Technical Institute, RAS
Author for correspondence.
Email: NIAlekseyev@yandex.ru
Saint Petersburg, Russia; Saint Petersburg, Russia
A. P Broiko
Saint Petersburg State Electrotechnical University "LETI"
Email: NIAlekseyev@yandex.ru
Saint Petersburg, Russia
I. V Oreshko
Saint Petersburg State Electrotechnical University "LETI"; Ioffe Physical-Technical Institute, RAS
Email: NIAlekseyev@yandex.ru
Saint Petersburg, Russia; Saint Petersburg, Russia
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