Preparing Thin Gallium Sulphide Films via PECVD and Studying Their Properties

L. A. Mochalov; Мочалов Л. А.; M. A. Kudryashov; Кудряшов М. А.; A. A. Logunov; Логунов А. А.; M. A. Vshivtsev; Вшивцев М. А.; I. O. Prokhorov; Прохоров И. О.; V. M. Vorotyntsev; Воротынцев В. М.; V. M. Malyshev; Малышев В. М.; T. S. Sazanova; Сазанова Т. С.; Yu. P. Kudryashova; Кудряшова Ю. П.; E. N. Bulanov; Буланов Е. Н.; A. V. Knyazev; Князев А. В.

doi:10.31857/S0044453723010211

Preparing Thin Gallium Sulphide Films via PECVD and Studying Their Properties

Авторлар: Mochalov L.¹, Kudryashov M.², Logunov A.¹^,2, Vshivtsev M.², Prokhorov I.², Vorotyntsev V.², Malyshev V.², Sazanova T.²^,3, Kudryashova Y.¹, Bulanov E.¹, Knyazev A.¹
Мекемелер:
1. Lobachevsky University
2. Nizhny Novgorod State Technical University
3. Mendeleev University of Chemical Technology
Шығарылым: Том 97, № 1 (2023)
Беттер: 148-154
Бөлім: ФИЗИЧЕСКАЯ ХИМИЯ ДИСПЕРСНЫХ СИСТЕМ И ПОВЕРХНОСТНЫХ ЯВЛЕНИЙ
URL: https://journals.rcsi.science/0044-4537/article/view/136541
DOI: https://doi.org/10.31857/S0044453723010211
EDN: https://elibrary.ru/BCQPAV
ID: 136541

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Аннотация
Авторлар туралы
Әдебиет тізімі
Қосымша файлдар
Статистика

Аннотация

Thin films of GaSх are obtained via plasma-enhanced chemical vapor deposition (PECVD) for the first time, while high-purity volatile derivatives of the corresponding macrocomponents (gallium chloride (GaCl3) and hydrogen sulfide (H2S)) are used as the initial materials. It is found that the nonequilibrium low-temperature plasma of an HF discharge (40.68 MHz) at a reduced pressure (0.01 Torr) is the initiator of chemical transformations. Components of reactive plasma formed in the gas phase are studied via optical emission spectroscopy (OES). Structural and electrophysical properties of the obtained materials are studied as well.

Негізгі сөздер

gallium sulfide, thin films, PECVD

Әдебиет тізімі

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