Effekt Kholla v dopirovannom mott-khabbardovskom dielektrike
- 作者: Kuchinskiy E.1, Kuleeva N.1, Sadovskiy M.1, Khomskiy D.2
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隶属关系:
- Institute for Electrophysics, Ural Branch, Russian Academy of Sciences
- II Physikalisches Institut, Universität zu Koeln
- 期: 卷 163, 编号 3 (2023)
- 页面: 417-427
- 栏目: Articles
- URL: https://journals.rcsi.science/0044-4510/article/view/145279
- DOI: https://doi.org/10.31857/S0044451023030136
- EDN: https://elibrary.ru/QFDCRI
- ID: 145279
如何引用文章
详细
We present theoretical analysis of Hall effect in doped Mott–Hubbard insulator, considered as a prototype of cuprate superconductor. We consider the standard Hubbard model within DMFT approximation. As a typical case we consider the partially filled (hole doping) lower Hubbard band. We calculate the doping dependence of both the Hall coefficient and Hall number and determine the value of carrier concentration, where Hall effect changes its sign. We obtain a significant dependence of Hall effect parameters on temperature. Disorder effects are taken into account in a qualitative way. We also perform a comparison of our theoretical results with some known experiments on doping dependence of Hall number in the normal state of YBCO and Nd-LSCO, demonstrating rather satisfactory agreement of theory and experiment. Thus the doping dependence of Hall effect parameters obtained within Hubbard model can be considered as an alternative to a popular model of the quantum critical point.
作者简介
E. Kuchinskiy
Institute for Electrophysics, Ural Branch, Russian Academy of Sciences
Email: kuchinsk@iep.uran.ru
620016, Yekaterinburg, Russia
N. Kuleeva
Institute for Electrophysics, Ural Branch, Russian Academy of Sciences
Email: strigina@iep.uran.ru
620016, Yekaterinburg, Russia
M. Sadovskiy
Institute for Electrophysics, Ural Branch, Russian Academy of Sciences
Email: sadovski@iep.uran.ru
620016, Yekaterinburg, Russia
D. Khomskiy
II Physikalisches Institut, Universität zu Koeln
编辑信件的主要联系方式.
Email: khomskii@ph2.uni-koeln.de
50937, Koeln, Germany
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