CHANGING THE PROPERTIES OF Hf0.5Zr0.5O2 DURING CYCLIC REPOLARIZATION OF FERROELECTRIC CAPACITORS WITH DIFFERENT ELECTRODE MATERIALS
- Authors: Zalyalov T.M.1,2, Islamov D.R.1,2
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
- Novosibirsk State University
- Issue: Vol 166, No 5 (2024)
- Pages: 703-709
- Section: ELECTRONIC PROPERTIES OF SOLIDS
- URL: https://journals.rcsi.science/0044-4510/article/view/268679
- DOI: https://doi.org/10.31857/S0044451024110130
- ID: 268679
Cite item
Abstract
The interest in the ferroelectric non-volatile memory as a candidate for low power consumption electronic memories was raised after the discovery of ferroelectricity in hafnium oxide. Doping by different elements of hafnia films allows improving their ferroelectric properties. In this work, the transport experiments are combined with the simulations to study the evolution of ferroelectric properties and the mean distance between oxygen vacancies during the endurance of hafnium-zirconium oxide in metal-ferroelectric-metal structures to study the impact of different metal electrodes.
About the authors
T. M. Zalyalov
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences; Novosibirsk State University
Email: timz@isp.nsc.ru
Russian Federation, 630090, Novosibirsk; 630090, Novosibirsk
D. R. Islamov
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences; Novosibirsk State University
Author for correspondence.
Email: timz@isp.nsc.ru
Russian Federation, 630090, Novosibirsk; 630090, Novosibirsk
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