CHANGING THE PROPERTIES OF Hf0.5Zr0.5O2 DURING CYCLIC REPOLARIZATION OF FERROELECTRIC CAPACITORS WITH DIFFERENT ELECTRODE MATERIALS
- 作者: Zalyalov T.M.1,2, Islamov D.R.1,2
-
隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
- Novosibirsk State University
- 期: 卷 166, 编号 5 (2024)
- 页面: 703-709
- 栏目: ELECTRONIC PROPERTIES OF SOLIDS
- URL: https://journals.rcsi.science/0044-4510/article/view/268679
- DOI: https://doi.org/10.31857/S0044451024110130
- ID: 268679
如何引用文章
详细
The interest in the ferroelectric non-volatile memory as a candidate for low power consumption electronic memories was raised after the discovery of ferroelectricity in hafnium oxide. Doping by different elements of hafnia films allows improving their ferroelectric properties. In this work, the transport experiments are combined with the simulations to study the evolution of ferroelectric properties and the mean distance between oxygen vacancies during the endurance of hafnium-zirconium oxide in metal-ferroelectric-metal structures to study the impact of different metal electrodes.
作者简介
T. Zalyalov
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences; Novosibirsk State University
Email: timz@isp.nsc.ru
俄罗斯联邦, 630090, Novosibirsk; 630090, Novosibirsk
D. Islamov
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences; Novosibirsk State University
编辑信件的主要联系方式.
Email: timz@isp.nsc.ru
俄罗斯联邦, 630090, Novosibirsk; 630090, Novosibirsk
参考
- D. Bondurant, Ferroelectrics 112, 273 (1990).
- T. S. B¨oscke, J. M¨uller, D. Br¨auhaus et al., Appl. Phys. Lett. 99, 102903 (2011).
- T. S. B¨oscke, S. Teichert, D. Br¨auhaus et al., Appl. Phys. Lett. 99, 112904 (2011).
- X. Sang, E.D. Grimley, T. Schenk et al., Appl.Phys. Lett. 106, 162905 (2015).
- M. Trentzsch, S. Flachowsky, R. Richter et al., IEEE IEDM, 11.5.1 (2016).
- S. Mueller, J. Muller, U. Schroeder et al., IEEE Trans.Device Mater.Reliab. 13, 93 (2013).
- M. Pesiˇc, F.P.G. Fengler, S. Slesazeck et al., IEEE IRPS, MY–3–1 (2016).
- U. Schroeder, E. Yurchuk, J. M¨uller et al., Jpn. J. Appl.Phys. 53, 08LE02 (2014).
- H. J. Kim, M.H. Park, Y. J. Kim et al., Nanoscale 8, 1383 (2016).
- Y. Lee, H. Alex Hsain, S. S. Fields et al., Appl.Phys. Lett. 118, 012903 (2021).
- M.G. Kozodaev, A.G. Chernikova, E.V. Korostylev et al., J.Appl.Phys. 125, 034101 (2019).
- M. I. Popovici, A.M. Walke, J. Bizindavyi et al., ACS Appl.Electron.Mater. 4, 1823 (2022).
- M.H. Park, H. J. Kim, Y. J. Kim et al., Phys. Status Solidi (RRL) 8, 532 (2014).
- S. S. Fields, S. W. Smith, S. T. Jaszewski et al., J.Appl.Phys. 130, 134101 (2021).
- A.G. Chernikova, M.G. Kozodaev, R.R. Khakimov et al., Appl.Phys. Lett. 117, 192902 (2020).
- S. Migita, H. Ota, H. Yamada et al., Jpn. J.Appl. Phys. 57, 04FB01 (2018).
- S.W. Smith, A.R. Kitahara, M.A. Rodriguez et al., Appl.Phys. Lett. 110, 072901 (2017).
- M.H. Park, H. J. Kim, Y. J. Kim et al., Appl.Phys. Lett. 105, 072902 (2014).
- T. Shimizu, T. Yokouchi, T. Shiraishi et al., Jpn. J. Appl.Phys. 53, 09PA04 (2014).
- M. Hyuk Park, H. Joon Kim, Y. Jin Kim et al., Appl. Phys. Lett. 102, 112914 (2013).
- M.H. Park, H. J. Kim, Y. J. Kim et al., Appl.Phys. Lett. 104, 072901 (2014).
- T. Shimizu, T. Yokouchi, T. Oikawa et al., Appl. Phys. Lett. 106, 112904 (2015).
- G. Karbasian, R. dos Reis, A.K. Yadav et al., Appl. Phys. Lett. 111, 022907 (2017).
- T.M. Zalyalov and D.R. Islamov, 2022 IEEE EDM, 48 (2022).
- К.А. Насыров, В.А. Гриценко, ЖЭТФ 139, 1172 (2011).
- D.R. Islamov, V.A. Gritsenko, C.H. Cheng et al., Appl.Phys. Lett. 105, 222901 (2014).
- V.A. Gritsenko, T.V. Perevalov, and D.R. Islamov, Phys.Rep. 613, 1 (2016).
- V.A. Gritsenko and A.A. Gismatulin, Appl.Phys. Lett. 117, 142901 (2020).
- D.R. Islamov, T.V. Perevalov, V.A. Gritsenko et al., Appl.Phys. Lett. 106, 102906 (2015).
- Д.Р. Исламов, А.Г. Черникова, М. Г. Козодаев и др., Письма в ЖЭТФ 102, 610 (2015).
- D.R. Islamov, V.A. Gritsenko, T.V. Perevalov et al., Acta Mater. 166, 47 (2019).
- Д.Р. Исламов, В.А. Гриценко, А. Чин, Автометрия 53, 102 (2017).
- A.A. Pil’nik, A.A. Chernov, and D.R. Islamov, Sci.Rep. 10, 15759 (2020).
- J. M¨uller, T. S. B¨oscke, D. Br¨auhaus et al., Appl. Phys. Lett. 99, 112901 (2011).
- P. Nukala, M. Ahmadi, Y. Wei et al., Science 372, 630 (2021).
- H.C. Barshilia, M. S. Prakash, A. Poojari et al., Thin Solid Films 460, 133 (2004).
- R. Alcala, M. Materano, P.D. Lomenzo et al., Adv. Funct.Mater. 33, 2303261 (2023).
- E.D. Grimley, T. Schenk, X. Sang et al., Adv.Electron. Mater. 2, 1600173 (2016).
- R. Alcala, F. Mehmood, P. Vishnumurthy et al., IEEE IMW (2022).
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