Мақаланы E-mail арқылы жіберу Kollektivnye i kvazilokal'nye mody v opticheskikh spektrakh geksaboridov YB6 i YbB6 s yan-tellerovskoy strukturnoy neustoychivost'yu
- Авторлар: Sluchanko N.1, Zhukova E.2, Alyab'eva L.2, Gorshunov B.2, Muratov A.3, Aleshchenko Y.3, Azarevich A.1, Anisimov M.1, Shitsevalova N.4
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Мекемелер:
- Prokhorov General Physics Institute, Russian Academy of Sciences
- Center for Photonics and Two-Dimensional Materials, Moscow Institute of Physics and Technology (National Research University)
- Lebedev Physics Institute, Russian Academy of Sciences
- Institute for Problems of Materials Science, National Academy of Sciences of Ukraine
- Шығарылым: Том 163, № 2 (2023)
- Беттер: 172-179
- Бөлім: Articles
- URL: https://journals.rcsi.science/0044-4510/article/view/145252
- DOI: https://doi.org/10.31857/S0044451023020049
- EDN: https://elibrary.ru/OQGWUY
- ID: 145252
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
The broad-band reflection spectra of YB6 and YbB6 hexaborides with Jahn–Teller instability of the boron cage have been measured at room temperature. An optical conductivity analysis has revealed, along with the Drude electronic components, heavily overdamped collective modes, which are notable in YB6 for high dielectric contributions, Δε = 2000–5700. The fraction of nonequilibrium charge carriers in YB6, which is at the boundary of structural instability in the hexaboride family, reaches 85–90%, whereas this fraction in doped YbB6 semiconductor is not higher than 25%. It has been shown that unlike the predictions of the topological Kondo insulator model, the surface “metallization” in Yb2+B6 crystals can be explained by additional doping of a surface layer with Yb3+ ions.
Авторлар туралы
N. Sluchanko
Prokhorov General Physics Institute, Russian Academy of Sciences
Email: nes@lt.gpi.ru
119991, Moscow, Russia
E. Zhukova
Center for Photonics and Two-Dimensional Materials, Moscow Institute of Physics and Technology (National Research University)
Email: nes@lt.gpi.ru
141700, Dolgoprudny, Moscow oblast, Russia
L. Alyab'eva
Center for Photonics and Two-Dimensional Materials, Moscow Institute of Physics and Technology (National Research University)
Email: nes@lt.gpi.ru
141700, Dolgoprudny, Moscow oblast, Russia
B. Gorshunov
Center for Photonics and Two-Dimensional Materials, Moscow Institute of Physics and Technology (National Research University)
Email: nes@lt.gpi.ru
141700, Dolgoprudny, Moscow oblast, Russia
A. Muratov
Lebedev Physics Institute, Russian Academy of Sciences
Email: nes@lt.gpi.ru
119991, Moscow, Russia
Yu. Aleshchenko
Lebedev Physics Institute, Russian Academy of Sciences
Email: nes@lt.gpi.ru
119991, Moscow, Russia
A. Azarevich
Prokhorov General Physics Institute, Russian Academy of Sciences
Email: nes@lt.gpi.ru
119991, Moscow, Russia
M. Anisimov
Prokhorov General Physics Institute, Russian Academy of Sciences
Email: nes@lt.gpi.ru
119991, Moscow, Russia
N. Shitsevalova
Institute for Problems of Materials Science, National Academy of Sciences of Ukraine
Хат алмасуға жауапты Автор.
Email: nes@lt.gpi.ru
03142, Kiev, Ukraine
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