Effect of doping on the mechanical properties of nonlinear GaSe crystals
- Authors: Potekaev A.I.1, Andreev Y.M.1,2,3, Kokh K.A.1,3,4,5, Svetlichnyi V.A.1,3
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Affiliations:
- Tomsk State University
- Institute of Monitoring of Climatic and Ecological Sciences, Siberian Branch
- Institute of High Current Electronics, Siberian Branch
- Sobolev Institute of Geology and Mineralogy, Siberian Branch
- Novosibirsk State University
- Issue: Vol 2016, No 10 (2016)
- Pages: 918-923
- Section: Promising Materials and Technologies
- URL: https://journals.rcsi.science/0036-0295/article/view/170915
- DOI: https://doi.org/10.1134/S0036029516100165
- ID: 170915
Cite item
Abstract
The effect of doping with sulfur, indium, tellurium, aluminum, erbium, and silver on the mechanical properties of nonlinear GaSe crystals grown by a modified Bridgman method with the rotation of a thermal field is studied. GaSe:S crystals have the best optical properties and GaSe:Al crystals have the highest microhardness. Under identical experimental conditions, we revealed an additive influence of double doping on the properties of GaSe: the crystals doped with sulfur and aluminum demonstrate the maximum efficiency of laser radiation frequency conversion and the maximum hardness. The increased hardness is supported by the appearing ability of the crystals to undergo cracking under the action of high-intensity radiation, which is characteristic of glass.
About the authors
A. I. Potekaev
Tomsk State University
Email: v_svetlichnyi@bk.ru
Russian Federation, Novosobornaya pl. 1, Tomsk, 634050
Yu. M. Andreev
Tomsk State University; Institute of Monitoring of Climatic and Ecological Sciences, Siberian Branch; Institute of High Current Electronics, Siberian Branch
Email: v_svetlichnyi@bk.ru
Russian Federation, Novosobornaya pl. 1, Tomsk, 634050; Tomsk, 634055; Tomsk, 634055
K. A. Kokh
Tomsk State University; Institute of High Current Electronics, Siberian Branch; Sobolev Institute of Geology and Mineralogy, Siberian Branch; Novosibirsk State University
Email: v_svetlichnyi@bk.ru
Russian Federation, Novosobornaya pl. 1, Tomsk, 634050; Tomsk, 634055; Novosibirsk, 630090; Novosibirsk, 630090
V. A. Svetlichnyi
Tomsk State University; Institute of High Current Electronics, Siberian Branch
Author for correspondence.
Email: v_svetlichnyi@bk.ru
Russian Federation, Novosobornaya pl. 1, Tomsk, 634050; Tomsk, 634055
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