Effect of doping on the mechanical properties of nonlinear GaSe crystals
- Авторлар: Potekaev A.1, Andreev Y.1,2,3, Kokh K.1,3,4,5, Svetlichnyi V.1,3
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Мекемелер:
- Tomsk State University
- Institute of Monitoring of Climatic and Ecological Sciences, Siberian Branch
- Institute of High Current Electronics, Siberian Branch
- Sobolev Institute of Geology and Mineralogy, Siberian Branch
- Novosibirsk State University
- Шығарылым: Том 2016, № 10 (2016)
- Беттер: 918-923
- Бөлім: Promising Materials and Technologies
- URL: https://journals.rcsi.science/0036-0295/article/view/170915
- DOI: https://doi.org/10.1134/S0036029516100165
- ID: 170915
Дәйексөз келтіру
Аннотация
The effect of doping with sulfur, indium, tellurium, aluminum, erbium, and silver on the mechanical properties of nonlinear GaSe crystals grown by a modified Bridgman method with the rotation of a thermal field is studied. GaSe:S crystals have the best optical properties and GaSe:Al crystals have the highest microhardness. Under identical experimental conditions, we revealed an additive influence of double doping on the properties of GaSe: the crystals doped with sulfur and aluminum demonstrate the maximum efficiency of laser radiation frequency conversion and the maximum hardness. The increased hardness is supported by the appearing ability of the crystals to undergo cracking under the action of high-intensity radiation, which is characteristic of glass.
Негізгі сөздер
Авторлар туралы
A. Potekaev
Tomsk State University
Email: v_svetlichnyi@bk.ru
Ресей, Novosobornaya pl. 1, Tomsk, 634050
Yu. Andreev
Tomsk State University; Institute of Monitoring of Climatic and Ecological Sciences, Siberian Branch; Institute of High Current Electronics, Siberian Branch
Email: v_svetlichnyi@bk.ru
Ресей, Novosobornaya pl. 1, Tomsk, 634050; Tomsk, 634055; Tomsk, 634055
K. Kokh
Tomsk State University; Institute of High Current Electronics, Siberian Branch; Sobolev Institute of Geology and Mineralogy, Siberian Branch; Novosibirsk State University
Email: v_svetlichnyi@bk.ru
Ресей, Novosobornaya pl. 1, Tomsk, 634050; Tomsk, 634055; Novosibirsk, 630090; Novosibirsk, 630090
V. Svetlichnyi
Tomsk State University; Institute of High Current Electronics, Siberian Branch
Хат алмасуға жауапты Автор.
Email: v_svetlichnyi@bk.ru
Ресей, Novosobornaya pl. 1, Tomsk, 634050; Tomsk, 634055
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