Atomic layer deposition of zinc sulfide nanolayers on monocrystalline silicon substrates
- 作者: Ezhovskii Y.1, Zakharova N.1
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隶属关系:
- St. Petersburg State Technological Institute (Technical University)
- 期: 卷 90, 编号 3 (2016)
- 页面: 647-651
- 栏目: Physical Chemistry of Surface Phenomena
- URL: https://journals.rcsi.science/0036-0244/article/view/167933
- DOI: https://doi.org/10.1134/S0036024416030092
- ID: 167933
如何引用文章
详细
The formation of zinc sulfide thin films via the atomic laminating of components from a gas phase on single-crystal silicon substrates with (100), (110), and (111) orientations is examined. The characteristic temperatures of changes in the mechanism of layer formation and structural perfection are determined. The conditions for using the mechanism of layer growth are determined.
作者简介
Yu. Ezhovskii
St. Petersburg State Technological Institute (Technical University)
编辑信件的主要联系方式.
Email: office@technolog.edu.ru
俄罗斯联邦, St. Petersburg, 190013
N. Zakharova
St. Petersburg State Technological Institute (Technical University)
Email: office@technolog.edu.ru
俄罗斯联邦, St. Petersburg, 190013