Atomic layer deposition of zinc sulfide nanolayers on monocrystalline silicon substrates
- Авторлар: Ezhovskii Y.1, Zakharova N.1
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Мекемелер:
- St. Petersburg State Technological Institute (Technical University)
- Шығарылым: Том 90, № 3 (2016)
- Беттер: 647-651
- Бөлім: Physical Chemistry of Surface Phenomena
- URL: https://journals.rcsi.science/0036-0244/article/view/167933
- DOI: https://doi.org/10.1134/S0036024416030092
- ID: 167933
Дәйексөз келтіру
Аннотация
The formation of zinc sulfide thin films via the atomic laminating of components from a gas phase on single-crystal silicon substrates with (100), (110), and (111) orientations is examined. The characteristic temperatures of changes in the mechanism of layer formation and structural perfection are determined. The conditions for using the mechanism of layer growth are determined.
Негізгі сөздер
Авторлар туралы
Yu. Ezhovskii
St. Petersburg State Technological Institute (Technical University)
Хат алмасуға жауапты Автор.
Email: office@technolog.edu.ru
Ресей, St. Petersburg, 190013
N. Zakharova
St. Petersburg State Technological Institute (Technical University)
Email: office@technolog.edu.ru
Ресей, St. Petersburg, 190013